Global 2D modeling of minority and majority substrate coupled currents

Conte, Fabrizio Lo; Sallèse, Jean-Michel; Pastre, Marc; Krummenacher, F.; Kayal, Maher

doi:10.1109/essderc.2009.5331455

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…A new modeling approach was proposed in [5,6] using an enhanced diode model. The adopted concept consists of providing additional terminals to the diode in order to keep minority carrier continuity at the interconnections.…”

Section: Introductionmentioning

confidence: 99%

Modeling methodology of high-voltage substrate minority and majority carrier injections

Conte

Sallèse

Kayal

2010

2010 Proceedings of the European Solid State Device Research Conference

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Abstract-This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation in the substrate. For the first time a typical H-bridge structure is simulated with the proposed methodology. The parasitic current injected in the substrate by a high-voltage structure is simulated in a circuitlevel simulator as well as with a finite elements method. Both are compared to measurements and show a very good agreement. The simulation resources needed by the proposed equivalent schematics are thus greatly reduced in regard to the finite element approach, offering an efficient tool for substrate modeling in smart power IC's.

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Section: Introductionmentioning

confidence: 99%