Global modeling of millimeter-wave circuits: electromagnetic simulation of amplifiers

Imtiaz, Sahar; El-Ghazaly, M.

doi:10.1109/22.643818

Cited by 68 publications

(35 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Different structures of GaAs MESFET devices, manufactured by GEC-Marconi, 3 were measured and simulated to validate the proposed approach. More precisely, the scattering matrices of the extrinsic passive structures were computed on the basis of foundry geometrical parameters 3 [27] obtained from process rules and device GDSII files, using the "em" Sonnet electromagnetic simulator [27].…”

Section: Resultsmentioning

confidence: 99%

“…These, in fact, normally keep wider spacing of the active devices, which are interconnected with transmission lines, according to the foundry design rules. 2,3 The objective of this example is to compare the performance of this highly integrated amplifier, predicted using the new approach, with the performance predicted using conventional analysis, based on foundry models, which does not account for coupling effects. In particular, the active area of the amplifier has been characterized using the standard MESFET structures and the procedure described in the previous section, while the scattering matrix of the amplifier extrinsic structure was characterized by using the SONNET electromagnetic simulator.…”

Section: Main Features Of the New Approach And Application In Highmentioning

confidence: 99%

“…1(b)] the scattering matrix associated with each active slice is defined as (3) and defining the matrix as (4) it is possible to obtain from (1) a homogeneous system of equations 6 . .…”

Section: The Empirical Distributed Modelmentioning

confidence: 99%

See 2 more Smart Citations

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

Cidronali

Collodi²,

Vannini³

et al. 1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-A new approach, using electromagnetic analysis, is proposed for field-effect transistor model scaling and monolithicmicrowave integrated-circuit (MMIC) design. It is based on an empirical distributed modeling technique where the active device is described in terms of an external passive structure connected to a suitable number of internal active sections. On this basis, an equivalent admittance matrix per gate unit width is obtained which, as confirmed by experimental results provided in this paper, is consistent with simple scaling rules. The same technique can also be adopted for a "global approach" to MMIC design where complex electromagnetic phenomena are also taken into account. An example of application concerning this aspect is presented.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Main Features Of the New Approach And Application In Highmentioning

confidence: 99%

See 1 more Smart Citation

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

Cidronali

Collodi²,

Vannini³

et al. 1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…Imtiaz and El-Ghazaly [5] proposed a model by using EM method to simulate the input and output matching network, but this model is not scalable. Laloue et al [6] presented a method for the gate length and number of gates scaling.…”

Section: Introductionmentioning

confidence: 99%

An Accurately Scalable Small-Signal Model for Millimeter-Wave Hemts Based on Electromagnetic Simulation

Wang¹,

Wang²,

Yu³

et al. 2014

PIER M

View full text Add to dashboard Cite

Abstract-By using some special passive structures and correction of boundary conditions a novel method to improve the electro-magnetic simulation accuracy is proposed. With this method many substrate parameters, such as thickness, loss, dielectric constant, loss tangent, sheet resistance, square capacitance and conductivity of the metal, can be described more accurately, and many high frequency effects caused by skin effects, parasitic effects, coupling between microstrip lines and fluctuation from the sheet resistance, etc. can also be simulated more precisely. An accurately scalable small-signal model for millimeter wave HEMTs is implemented and presented. Combined with distributed modeling, pulsed IV and S parameter measurements, this model can be made scalable freely. The measurements agree with simulated results very well, which also shows that this method applied to the scalable small signal model has a good consistency and accuracy.

show abstract

“…To avoid these useless steps consisting in simulating low-size elements, a solution resides in the introduction of the localised elements "lumped element" [1] into the electromagnetic software: finite elements [2], finished differences [3]. Another more rigorous solution consists in simulating the various parts of the circuit by adequate methods and equalizing the fields in extreme cases of the fields [4].…”

Section: Introductionmentioning

confidence: 99%

New Formulation of the Iterative Method: Application to a Microwaves Attenuator

Mejri¹,

Aguili²,

Baudrand³

2010

PIER B

View full text Add to dashboard Cite

Abstract-In this article, we developed a new method of calculation of the active microwaves circuits in micro ribbon technology. This technique is based on the iterative method where localised auxiliary sources are introduced to model the active elements of the circuit (ultra high frequency diodes). To validate this work, the results obtained are compared with those obtained by the software momentum of advanced design system (ADS). We show primarily the interests and the operational limits of auxiliary source in the formulation of the considered problem.

show abstract

Global modeling of millimeter-wave circuits: electromagnetic simulation of amplifiers

Cited by 68 publications

References 25 publications

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

An Accurately Scalable Small-Signal Model for Millimeter-Wave Hemts Based on Electromagnetic Simulation

New Formulation of the Iterative Method: Application to a Microwaves Attenuator

Contact Info

Product

Resources

About