“…Next, the patterns designed in PMMA are transferred into the silicon substrate via a suitable RIE process. The RIE conditions are: 10 sccm for O 2 , 45 sccm for SF 6 with P = 30 W, a pressure of 50 mTorr and an autopolarization voltage of 85V [15,17]. Then, the PMMA mask is removed with a lift-off process in trichloroethylene at 80 • C. Next, the Si master mold surface is treated with HF and H 2 O 2 in order to obtain a SiO 2 thin surface layer, then modified with an anti-sticking layer (TMCS: TriMethylChloroSilane) for decreasing the surface energy (Si+TMCS = 28.9 mN/m) in order to easy remove the PDMS molds [17,19,20].…”