Gold Schottky contacts on (002) CdSe films growing on p-type silicon wafer

Opto-electronic characterizations of oriented nano-structure CdSe film/Si (001) heterostructure

“…2 shows the experimental XRD pattern of the as-deposited CdSe onto glass substrate which illustrates the presence of an intensive diffraction peak, at 2h obs = 25.415. This peak has been established by various authors for synthesized CdSe thin films at 2h = 25.4 using different evaporation techniques [7]. Hence, the detectable peak located at 2h obs = 25.425°is indexed as the (0 0 2) lattice plane of the hexagonal wurtzite phase of CdSe that consistent with the value in the standard card ([JCPDS: 77-2307], with lattice parameters a = 0.4299 nm and c = 0.7010 nm).…”

“…Therefore, metal-CdSe contacts are critical for CdSe device applications. To date, there have been several reports in the literatures discussing the rectifying behavior of (Al, or Au)/CdSe contacts which are often called a Schottky contacts or Schottky diodes [7]. Recently, Athanassopoulou and his colleagues have discussed that the electrolytic deposition of CdSe on Ni substrates show the cubic zinc-Blende structure even after the annealing process.…”