Grain Boundary Resistivity of Yttria-Stabilized Zirconia at 1400°C

Abstract

The grain size dependence of the bulk resistivity of 3 mol% yttria-stabilized zirconia at 1400°C was determined from the effect of a dc electric field Ea=18.1 V/cm on grain growth and the corresponding electric current during isothermal annealing tests. Employing the brick layer model, the present annealing test results were in accordance with extrapolations of the values obtained at lower temperature employing impedance spectroscopy and 4-point-probe dc. The combined values give that the magnitude of the grain boundary resistivity ρb=133 ohm-cm. The electric field across the grain boundary width was 28–43 times the applied field for the grain size and current ranges in the present annealing test.

A novel green nonaqueous sol-gel process for preparation of partially stabilized zirconia nanopowder

“…The translucent zirconia ceramic body was obtained by granulation by agate mortar grinding for 15 min, pressing into pellets under pressure of 8 MPa and sintering at 1400°C [18] for 2 h in box-type high temperature muffle furnace (KBF1600). The temperature rise rates from 20 to 400°C, 400 to 1050°C, 1050 to 1400°C and 1400 to 800°C were 3.5, 5, 2 and −5°C/min, respectively, and holding time at 1050°C was 2 h and at 1400°C it was 3 h.…”

Transient-regime grain growth in nanocrystalline yttria-stabilized zirconia annealed without and with a DC electric field

“…Thus, the major effect of the electric field on grain growth can be attributed to a reduction in c gb , with little, if any, effect on the exponent m; see Figure 4. It is proposed that the reduction in c gb caused by the electric field results from its interaction with the space charge at the GBs, the magnitude of the space charge potential ø i being relatively independent of grain size [25,26].…”