Graphene-coated copper nanowire networks as a highly stable transparent electrode in harsh environments toward efficient electrocatalytic hydrogen evolution reactions

Abstract

Copper nanowire networks (NWs) coated with a graphene layer through a carbon-enclosed chemical vapor deposition technique at a low temperature of 400 °C with a low sheet resistance of 23.2 Ω sq−1 and a high transmittance of 83.4%, which is comparable to typical values of tin-doped indium oxide (ITO), as a transparent conducting electrode were demonstrated.

Vanadium doped few-layer ultrathin MoS2 nanosheets on reduced graphene oxide for high-performance hydrogen evolution reaction

“…The remarkable electrocatalytic performance can also be explained by the superior contact of the electrolyte with active sites on the heterostructure formed by the doping of vanadium as well as graphene. 50,51 A detailed comparative study of some other catalysts for HER has been done in shown in Table S2. † [52][53][54][55][56][57][58]…”

Single Cu Atoms as Catalysts for Efficient Hydrazine Oxidation Reaction

“…[1,2] The hydrazine oxidation reaction (HzOR) can replace the anodic oxygen evolution reaction (OER) to achieve a more energy-efficient electrolytic hydrogen production; this is because it has a significantly lower standard potential than that of OER. [3][4][5][6][7][8] Therefore, there is a need to develop a catalyst that effectively reduces the reaction potential of HzOR.…”

Properties of Nitrogen/Silicon Doped Vertically Oriented Graphene Produced by ICP CVD Roll-to-Roll Technology

“…VOG growth can be achieved at lower temperatures (<800 • C) if the inductively coupled plasma chemical vapor deposition method (ICP CVD) is used, and it has become a key technique for the synthesis of high-quality coating without material damage and undesired defect formation [27][28][29]. Another advantage of CVD is due to the broad choice of available substrates for VOG preparation (e.g., SiO 2 and Al 2 O 3 [30], Si [31], Ni [32], stainless steel [33][34][35][36], Cu [37][38][39][40], Co [41], Al and TiO 2 [42], Al 2 O 3 [43], and Pt [44][45][46]). However, the VOG growth by ICP CVD is a complex, not well understood process because the changes in the VOG structure depend on a plasma source and a series of technological parameters including the type of a precursor gas (e.g., CH x (x = 1-3), CF 4 , CHF 3 , or C 2 F 6 ), gas composition and its partial pressure, the deposition time, and heating treatment [47].…”