Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

Foxe, Michael; López, G.A.; Childres, Isaac; Jalilian, Romaneh; Patil, Ashwini; Roecker, Caleb; Boguski, J.; Jovanovic, Igor; Chen, Yong P.

doi:10.1109/tnano.2012.2186312

Cited by 45 publications

(26 citation statements)

References 13 publications

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“…NATURE NANOTECHNOLOGY DOI: 10.1038/ NNANO.2017.46 light is absorbed and leads to an increase in the electric field at the graphene in the presence of the backgate voltage. The change in the electric field changes the carrier density in the graphene and thus the conductivity of graphene 26 . In this way, the change in graphene conductivity is used to detect the light interacting with SiC via the field effect.…”

Section: Field Effect and Photoresponsementioning

confidence: 99%

“…To develop a better understanding of this photo-induced fieldeffect photodetection mechanism, we modelled the GFETs and conducted finite-element method (FEM) simulations (Supplementary Sections 1 and 9) 26 . A representative simulation of the electric potential and field lines in SiC under graphene is presented in the inset of Fig.…”

Section: Field Effect and Photoresponsementioning

confidence: 99%

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Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC

et al. 2017

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The extraordinary optical and electronic properties of graphene make it a promising component of high-performance photodetectors. However, in typical graphene-based photodetectors demonstrated to date, the photoresponse only comes from specific locations near graphene over an area much smaller than the device size. For many optoelectronic device applications, it is desirable to obtain the photoresponse and positional sensitivity over a much larger area. Here, we report the spatial dependence of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused laser beam across the GFET. The GFET shows a nonlocal photoresponse even when the SiC substrate is illuminated at distances greater than 500 µm from the graphene. The photoresponsivity and photocurrent can be varied by more than one order of magnitude depending on the illumination position. Our observations are explained with a numerical model based on charge transport of photoexcited carriers in the substrate.

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Section: Field Effect and Photoresponsementioning

confidence: 99%

Section: Field Effect and Photoresponsementioning

confidence: 99%

Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC

et al. 2017

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“…A few proposals for devices using 2D materials for ionizing radiation detection have been made, but a review of the related (and rather scarce) literature [5,6,7] shows that no reliable evaluation of their performance for high-energy particle detection exists. The devices studied in these works were all designed for detecting large doses of X-Rays, and not single minimum ionizing particles (MIPs), which generate a substantially weaker signal.…”

Section: Previous Workmentioning

confidence: 99%

Devices based on 2D materials for on-chip amplification of ionization charges

Ciarrocchi¹,

Forti²,

Iannaccone³

et al. 2017

Proceedings of the 25th International Workshop on Vertex Detectors — PoS(Vertex 2016)

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Pixels detectors are widely used ionizing radiation detection devices in high-energy physics (HEP) experiments. Segmented detectors have been employed for many years due to the need to simultaneously track the thousands of particles emerging from modern colliders. For more precise and accurate measurements one would like to have faster, less noisy and smaller pixels, but current technology imposes several limits on these characteristics. The aim of this work is to explore the possible applications of bi-dimensional materials such as Graphene or transition metal dichalcogenide monolayers (TMDs) to address these problems. In particular, one wants to determine whether nano-electronic devices based on 2D materials could be used to obtain built-in pre-amplification of the pixel signal, thus achieving better detection performance. The working principle is the field-effect modulation of the channel conductivity in a 2D material-based transistor, due to the presence of ionization charges in a silicon absorber. Several architectures are tested, and a final device of choice is presented, with a sketch of a realistic readout system and its noise figure. The conductance modulation due to incoming particles is found to be more than 30%, resulting in a strong current signal, which leads to very favourable signal-to-noise ratios (SNR).

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“…78 By fabricating graphene FETs on a radiation absorbing substrate, such devices have been demonstrated to show the ability to detect electromagnetic radiation (light, X-ray, and γ-ray). 79,80 The technical approach is to utilize the highly sensitive dependence of the electrical conductivity of graphene on the local electric field, in which charge ionization is created when energetic radiation interacts with the underlying radiation absorbing substrate. Also graphene is chemically inert and pure, and it can be functionalized by other molecules as a drug delivery vehicle.…”

Section: -75mentioning

confidence: 99%

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Chung

Shen²,

Cao

et al. 2013

Int. J. Mod. Phys. B

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The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this chapter, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

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Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

Cited by 45 publications

References 13 publications

Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC

Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC

Devices based on 2D materials for on-chip amplification of ionization charges

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

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