Graphene growth on silicon carbide: A review

Abstract

Graphene has been widely heralded over the last decade as one of the most promising nanomaterials for integrated, miniaturized applications spanning from nanoelectronics, interconnections, thermal management, sensing, to optoelectronics. Graphene grown on silicon carbide is currently the most likely candidate to fulfill this promise. As a matter of fact, the capability to synthesize high-quality graphene over large areas using processes and substrates compatible as much as possible with the well-established semiconductor manufacturing technologies is one crucial requirement. We review here, the enormous scientific and technological advances achieved in terms of epitaxial growth of graphene from thermal decomposition of bulk silicon carbide and the fine control of the graphene electronic properties through intercalation. Finally, we discuss perspectives on epitaxial graphene growth from silicon carbide on silicon, a particularly challenging area that could result in maximum benefit for the integration of graphene with silicon technologies.

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“…4(h)]. 75 Highly crystalline or amorphous graphene films that can be transferred to various substrates have been grown using chemical vapor deposition system (CVD) systems [ Fig. 4(i)].…”

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“…Graphene can be produced by both bottom‐up and top‐down approaches . In the first case, the atom‐by‐atom assembling of the graphene honeycomb lattice is carried out through techniques as the chemical vapour deposition (CVD), and growth on SiC . The top‐down approach, instead, consists in peeling‐off the layers of graphite, by exploiting methods as the micromechanical cleavage (MC) and the liquid‐phase exfoliation (LPE) .…”

Bioelectronics and Interfaces Using Monolayer Graphene

“…[88] Another method that shows promise for wafer-scale device applications is the growth of graphene and few layer graphene on SiC, which is termed epitaxial graphene. [113][114][115][116] Through thermal decomposition at high temperatures (> 800 8C) at high vacuum, carbon atoms rearrange on the surface of SiC to form graphitic layers. [117] The conductivity of SiC wafers can be modulated by doping and hence it is possible to obtain graphene directly on highly resistive SiC substrates.…”