Graphene/InN and Graphene/MoS<inf>2</inf> heterojunctions: Characterization and sensing applications

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light–Matter Interactions

“…Van der Waals (vdW) solids are vertically stacked heterostructures that consist of different layered components. These materials have opened a window into a new landscape of next generation electronics and optoelectronics such as transistors, 1-5 sensors, [6][7][8] photodetectors, [9][10][11][12][13][14] and spin-valleytronic devices. [15][16][17] In light of the discoveries in inorganic two-dimension (2D) crystals, such as graphene, 5,7,18 hexagonal boron nitride (h-BN) 5,19,20 and transition metal dichalcogenides (TMDs), 21,22 one could engineer composition, thickness and stacking sequences of layered components in vdW solids for design of new material architectures and properties suited for specific applications.…”

Electrically or chemically tunable photodetector with ultra high responsivity using graphene/InN nanowire based mixed dimensional barristors

“…The discovery of graphene, a two-dimensional (2D) array of carbon atoms in a hexagonal lattice, marked the beginning of an entirely new era of research, fueled by its exceptional properties [1], such as exceptionally high mobility [2,3], ultra high thermal conductivity [4], ability to respond to a wide variety of surface adsorbates [5], etc. Although the zero band gap of graphene turned it into a poor material for field effect transistors (FETs) in terms of switching [6], it has been wellestablished that this shortcoming can be effectively overcome by forming a heterojunction with graphene and another semiconductor, with additional benefits stemming from the presence of a Schottky barrier at the hetero-interface [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. The functionality of these devices can be further enhanced, by realizing a gate tunable version of this device structure where the Schottky barrier height (SBH) can be modified electrically, turning it into a Schottky barrier transistor (i.e.…”

“…'barristor'). These devices can find wide spread applications in RF electronics, molecular sensing, photo detection, analog amplification and digital electronics [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. Since graphene absorbs about 2.3% of the incident light per layer, mono-or bilayer graphene is an excellent candidate for transparent electrodes with the additional benefit provided by the SBH that can be tuned by electrically or chemically modifying its Dirac point [25].…”