Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

Abstract

In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm2 in size) were pre-annealed in a vacuum at 950 °C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 °C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of ∼900 μm size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene.

Ultra-Low Loading of Iron Oxide and Platinum on CVD-Graphene Composites as Effective Electrode Catalysts for Solid Acid Fuel Cells

“…In this work, we followed the CVD-graphene transfer process reported by Hatahet et al [14,106]. Briefly, as-grown CVD-graphene films were transferred onto various substrates using wet chemical etching of the Cu foils in solutions containing iron (III) chloride (VWR, 99-102%) in hydrochloride acid (HCl, Sigma-Aldrich, 37%, Taufkirchen, Germany) or ammonium persulfate (Sigma-Aldrich, ≥98.0%, Taufkirchen, Germany).…”

Functionalized and Platinum-Decorated Multi-Layer Oxidized Graphene as a Proton, and Electron Conducting Separator in Solid Acid Fuel Cells

“…Then, 100 mL of the ammonium persulfate (0.04 M) or iron chloride (0.22 M) in hydrochloric acid (1 M) was poured into a crystallizing dish where the PMMA|graphene|copper sample was allowed to float on the etchant's surface, carried by surface tension forces. A glass cylinder with open ends and a slightly smaller radius than the crystallizing dish was inserted into the dish, forming a double-walled cylinder, however, suspended in order to leave a small gap between the cylinder and the bottom of the dish [96]. After 8 h, the dissolution of the copper foil was complete and the etchant was removed with Q-milli water by repeatedly draining out the waste solution and adding in milli-Q water, through the inter-wall region between the crystallizing dish and the glass cylinder, until neutral pH was reached.…”

Interfacial States and Fano–Feshbach Resonance in Graphene–Silicon Vertical Junction

“…Interfacial states and interactions have a strong influence on intrinsic properties of two-dimensional (2D) materials and related quantum materials. For example, substrate selection directly determines the mobility of 2D materials. − Interface proximity effects in the heterostructures composed of 2D materials, topological insulators, and superconductors have been applied to construct various novel quantum states for the applications such as spintronic memory, , quantum logic operation, etc. Because of the significant impacts of the interfacial states on material designs and applications in spintronic devices, quantum computing, and high-performance memories, relevant research is receiving a great deal of attention recently.…”