Graphene, Transition Metal Dichalcogenides, and Perovskite Photodetectors

Yang, Zhi; Dou, Jinjuan; Wang, Minqiang

doi:10.5772/intechopen.74021

Cited by 7 publications

(5 citation statements)

References 65 publications

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“…Photodetectors are highly demanded in various application fields, including optical communications [1,2], sensing [3,4] and energy harvesting [5,6]. Currently, in many application circumstances, selfpowered [7][8][9][10] and response tunable photodetectors [11][12][13] with optimum detectivity and miniaturized size are desirable.…”

Section: Introductionmentioning

confidence: 99%

Self-powered photodetector based on vertical MoO ₃ /MoS ₂ hetero-structure with gate tunable photo-response

Zhang

et al. 2019

2D Mater.

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Tunable photo-response is highly desirable by photodiodes for future optoelectronic applications. As compared to bulk semiconducting materials, the atomically thin two-dimensional (2D) materials may be one of the potential candidates to fabricate such adaptive photodiodes, since they possess not only excellent but also widely tunable optoelectronic properties. The most extensively applied device structure for the 2D materials based photodiodes is the vertically aligned van der Waals heterostructure. However, fabricating the vertical 2D material heterostructures is usually complicated, involving manually stacking multiple 2D material flakes together, which is undesirable for industry applications. In this work, we developed a vertical MoO 3 /MoS 2 heterojunction for photodetection and photovoltaic applications. The device used MoS 2 and its oxidation layer of MoO 3 as the n-and p-type regions, respectively, which can greatly simplify the fabrication process of 2D vertical heterojunctions. Moreover, the device exhibited prominent photo-response with photoresponsivity of 670 mA W −1 , detectivity of 4.77 × 10 10 Jones and power conversion efficiency (PCE) of 3.5% under 0 V bias. The device also presented efficient gate tunability on photocurrent with on/ off ratio of 10 3 . This research provides an alternative way to fabricate 2D materials based vertical heterojunctions for optoelectronic applications with tunable photo-responses.

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Section: Introductionmentioning

confidence: 99%

Self-powered photodetector based on vertical MoO ₃ /MoS ₂ hetero-structure with gate tunable photo-response

Zhang

et al. 2019

2D Mater.

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“…The band structures of layered materials differ from their bulk counterparts. For example, in the case of transition metal dichalcogenides (TMDs), the band structure transits from a smaller indirect transition to a larger direct one due to quantum confinement effects [17]. Thus, the bandgap can be tuned by changing the number of layers and TMDs can detect light at different wavelengths.…”

Section: D Materials-general Outlookmentioning

confidence: 99%

Opto-Electronics Review

Rogalski

2022

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In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe2/MoS2 and WS2/HfS2 heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.

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“…Despite the fact that the mobility can be improved by increasing the number of TMDs layers, this disadvantage is difficult to circumvent. The carrier density depends on the doping levels and the number of recombination centers, and typically reaches 10 12 cm −2 [54].…”

Section: D Materials Infrared Photodetectorsmentioning

confidence: 99%

Trends in Performance Limits of the HOT Infrared Photodetectors

et al. 2021

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The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots.

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Graphene, Transition Metal Dichalcogenides, and Perovskite Photodetectors

Cited by 7 publications

References 65 publications

Self-powered photodetector based on vertical MoO ₃ /MoS ₂ hetero-structure with gate tunable photo-response

Self-powered photodetector based on vertical MoO ₃ /MoS ₂ hetero-structure with gate tunable photo-response

Opto-Electronics Review

Trends in Performance Limits of the HOT Infrared Photodetectors

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Graphene, Transition Metal Dichalcogenides, and Perovskite Photodetectors

Cited by 7 publications

References 65 publications

Self-powered photodetector based on vertical MoO 3 /MoS 2 hetero-structure with gate tunable photo-response

Self-powered photodetector based on vertical MoO 3 /MoS 2 hetero-structure with gate tunable photo-response

Opto-Electronics Review

Trends in Performance Limits of the HOT Infrared Photodetectors

Contact Info

Product

Resources

About

Self-powered photodetector based on vertical MoO ₃ /MoS ₂ hetero-structure with gate tunable photo-response

Self-powered photodetector based on vertical MoO ₃ /MoS ₂ hetero-structure with gate tunable photo-response