Green Laser Annealing with Light Absorber

TEM study on the electrical discharge machined surface of single-crystal silicon

“…After EDM machining from our results, amorphous regions are present only in combination with a crystalline matrix. To eliminate the factor of the FIB amorphisation during preparation of the lamellar, Raman spectroscopy confirmed the presence of the amorphous phase in the machined surface with the characteristic hump in the signal, peaking at approximately 470 cm −1 .The maximum penetration depth of 532 nm laser in silicon is 927 nm (Shibahara et al, 2005). It is also important to note that the Raman shifts recorded represent an average value from the entire scattering volume between the surface and the 927 nm maximum depth.…”

“…The process is particularly useful for the rapid evaluation of the state of pure materials such as single-crystal. The maximum penetration depth of 532 nm laser in Silicon is 927 nm (Shibahara et al, 2005). This is important for qualifying the depth assessed by Raman spectroscopy and therefore whether its results represent the machining induced recast layer or a combination of it and the bulk beneath.…”