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We report, for the first time, a detailed study of the 100 ptm-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the relation between the trench depth and emissivity was clarified quantitatively. It was found that micro temperature variation within a chip driven by the emissivity variation exceeds of 100°C as the transistor structure was annealed by FLA.

Laser annealing with nano-seconds pulse width is expected to be a useful tool for ultra-shallow junction formation. To compensate for the deep penetration depth of green laser light into Si, a metal absorber was placed on a specimen. The absorber was effective in reducing the laser energy density required to activate dopant. However, absorber formation that resulted in over-melt that increased junction depth easily occurred compared with specimens without the absorber. This problem was attributable to the absence of the increase in reflectivity by surface Si melting.

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