Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing

Matsuno, Akira; Takii, E.; Eto, Takanori; Kurobe, Ken-ichi; Shibahara, Kentaro

doi:10.1016/j.nimb.2005.04.088

Cited by 10 publications

(6 citation statements)

References 3 publications

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“…The FWHM of the crystalline and amorphous peaks are 5.4 ± 0.6 and 26.9 ± 0.8 cm -1 respectively. The absorption coefficients and penetration depths of a-Si and c-Si for 532 nm wavelengths are 1.5 × 10 5 cm −1 , 67 nm and 1 × 10 4 cm −1 , 100 nm respectively [28]. The crosssectional SEM image (Fig.…”

Section: Icmme 2015mentioning

confidence: 94%

Composition of silicon fibrous nanostructures synthesized using ultrafast laser pulses under ambient conditions

Sivakumar

Venkatakrishnan

Tan

2015

MATEC Web of Conferences

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Abstract. In this study the composition of nanostructures generated owing to ablation of crystalline silicon using high repletion rate femtosecond laser under ambient condition is investigated. The web-like silicon fibrous nanostructures are formed in and around the laser irradiated area. Electron Microscopy investigation revealed that the nanostructures are made of nanoparticles of size about 40 nm. In addition Micro-Raman analysis shows that the nanofibrous structures comprises a mixture of amorphous and polycrystalline silicon. X-ray photoelectron spectroscopy analysis reveals the oxidized and un-oxidized elemental states of silicon in the nanostructures. Moreover web-like fibrous nanostructures are generated due to condensation of super saturated vapour and subsequent nucleus growth in the laser induced plasma plume.

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Section: Icmme 2015mentioning

confidence: 94%

Composition of silicon fibrous nanostructures synthesized using ultrafast laser pulses under ambient conditions

Sivakumar

Venkatakrishnan

Tan

2015

MATEC Web of Conferences

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“…The following industrial applications have been published: CW-laser annealing by scanning the wafer to create local pulses with lengths from 0.5 to 2 µm and peak temperatures up to 1300°C (see Fig. method of proximity heating allows the near surface annealing more or less independently from the laser source (pulsed or CW) [36,71,72,78]. The solid state laser with pulses in ns-duration also comes into the play with much more stable conditions and the well known homogenizer concept for chip-wise anneal in submelt and melt regimes [75].…”

Section: Industrial Applications From 1987 Till 2007mentioning

confidence: 99%

“…This "laser spike annealing" (LSA) has found a lot of solid phase applications for ultra-shallow junction formation [75,76,77]. In most cases proximity heating is used by help of cladding layers for uniform absorption [78] The simple planar annealing seems to be the domain of light pulses with full wafer illumination (flash anneal [78]) including proximity heating methods. The real power of lasers can be taken into account if ns-pulses have to be used together with the need of use for dissipative systems of nmdimensions.…”

Section: Industrial Applications From 1987 Till 2007mentioning

confidence: 99%

Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing

Geiler¹

2008

MSF

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About 25years after inventing the laser annealing effects of ion implanted semiconductors a summary of the related physical phenomena is given. The field of application for short and selectively deposited energy pulses in controlled thermally activated processing is critically reviewed with the emphasis on electrical activation of implanted layers. Starting form the energy deposition and continuing to the excited transport phenomena a set of regimes can be described, which allows the classification of the variety of laser annealing methods and their different application. Within the scope of controlled thermally activated processes in nanometer dimensions old phenomena like phase transitions in strong non-equilibrium to create metastable states or producing dissipative structures by nonlinear coupling effects with self-organization are taken into account for device generations beyond 45nm. The challenges and disadvantages of laser annealing methods for planar semiconductor technology will be elaborated with respect to the current progress in laser development.

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“…Complex work on material selection and structure optimization is necessary to find practical absorber structures. In addition, we have recently reported that LA with a metal absorber easily led to the overmelting of the c-Si due to the absence of reflectivity reduction due to Si melting [11], [12]. As a result, the process-window width against E L was decreased by the introduction of the absorber.…”

Section: Fundamental Merits Of Halamentioning

confidence: 99%

Merits of heat assist for melt laser annealing

Shibahara

Eto

Kurobe

2006

IEEE Trans. Electron Devices

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In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a negligibly small diffusion at this region. A high activation rate is achievable by melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Ω/sq. for both n + /p and p + /n junctions. These results imply that PMLA is applicable for much shallower junction formation.

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Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing

Cited by 10 publications

References 3 publications

Composition of silicon fibrous nanostructures synthesized using ultrafast laser pulses under ambient conditions

Composition of silicon fibrous nanostructures synthesized using ultrafast laser pulses under ambient conditions

Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing

Merits of heat assist for melt laser annealing

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