2008
DOI: 10.4028/www.scientific.net/msf.573-574.237
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Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing

Abstract: About 25years after inventing the laser annealing effects of ion implanted semiconductors a summary of the related physical phenomena is given. The field of application for short and selectively deposited energy pulses in controlled thermally activated processing is critically reviewed with the emphasis on electrical activation of implanted layers. Starting form the energy deposition and continuing to the excited transport phenomena a set of regimes can be described, which allows the classification of the vari… Show more

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