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Needle-like spikes penetrating into Si substrates have been detected by cross-sectional transmission electron microscopy (TEM) studies of Co silicide/Si interfaces. The spikes are crystalline CoSi x and form at annealing temperatures of 400–425° C, when the transformations of Co→Co2Si and Co2Si→CoSi are both taking place. They sometimes extend to the p/n junction depth of 100 nm. During annealing at above 500° C, they become spherical and their density decreases. The temperature range in which CoSi x spikes are formed and extend to near the junction depth corresponds well with that for the onset of junction leakage. Therefore, this supports the conclusion that Co silicide junction leakage is caused by such spike formation.

We report, for the first time, a detailed study of the 100 ptm-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the relation between the trench depth and emissivity was clarified quantitatively. It was found that micro temperature variation within a chip driven by the emissivity variation exceeds of 100°C as the transistor structure was annealed by FLA.