Despite a large amount of data and numerous theoretical proposals, the microscopic mechanism of transport in thick film resistors remains unclear. However, recent low temperature measurements point toward a possible variable range hopping mechanism of transport. Here we examine how such a mechanism affects the gauge factor of thick film resistors. We find that at sufficiently low temperatures T , for which the resistivity follows the Mott's law R(T ) ∼ exp(T0/T ) 1/4 , the gauge factor GF is proportional to (T0/T ) 1/4 . Moreover, the inclusion of Coulomb gap effects leads to GF ∼ (T ′ 0 /T ) 1/2 at lower temperatures. In addition, we study a simple model which generalizes the variable range hopping mechanism by taking into account the finite mean inter-grain spacing. Our results suggest a possible experimental verification of the validity of the variable range hopping in thick film resistors.