Group-IV-semiconductor quantum-dots in thermal SiO<sub>2</sub> layer fabricated by hot-ion implantation technique: different wavelength photon emissions

Mizuno, Tomohisa; Kanazawa, Rikito; Yamamoto, K.; Murakawa, Kohki; Yoshimizu, Kazuma; Tanaka, Midori; Aoki, Takashi; Sameshima, Toshiyuki

doi:10.35848/1347-4065/abdb80

Cited by 5 publications

(19 citation statements)

References 32 publications

(72 reference statements)

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“…12) In addition, the broad PL spectrum of SiC-QD is probably attributable to the sum of PL emissions from cubic and hexagonal SiC-polytypes. 13) The peak PL-wavelength λ PL of IV-QDs could be controlled by the implanted ions of Si + (near-IR), Si + /C + (visible), and C + (near-UV). 13) An indirect bandgap SiC can emit PL photons which are attributable to the free exciton recombination of electrons excited by photons in SiC, [14][15][16] and thus, the peak PL photon energy (E PH ) of SiC is equal to the exciton energy gap (E GX ), which is approximately 0.1 eV lower than the bandgap energy (E G ).…”

Section: Introductionmentioning

confidence: 99%

“…13) The peak PL-wavelength λ PL of IV-QDs could be controlled by the implanted ions of Si + (near-IR), Si + /C + (visible), and C + (near-UV). 13) An indirect bandgap SiC can emit PL photons which are attributable to the free exciton recombination of electrons excited by photons in SiC, [14][15][16] and thus, the peak PL photon energy (E PH ) of SiC is equal to the exciton energy gap (E GX ), which is approximately 0.1 eV lower than the bandgap energy (E G ). 14,15) In addition, the impurity states of SiC have a large influence on PL properties, such as PL emissions of multiple-levels, such as bound exciton and donor-acceptor pair.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, for realizing Si-based photonics, [1][2][3] we have been experimentally studied photon emissions from nano-structures of group-IV semiconductors (Si, SiC, and C), such as two-dimensional (2D) Si, 4,5) SiC-nano-dots in various crystal structures of Si [6][7][8][9][10][11] [amorphous-Si (a-Si), poly-Si, crystal-Si (c-Si)], and group-IV semiconductor quantum-dots (IV-QD) of Si, SiC, and C in thermal Si-oxide (OX). 12,13) Si-, SiC-, and C-dots were fabricated by very simple hot-ion implantations of single Si + , double Si + /C + , and single C + , respectively, and a post N 2 annealing was carried out to improve the dot quality. 13) The dots had diameter Φ of approximately 2-4 nm and surface density N of approximately 2 × 10 12 cm −2 .…”

Section: Introductionmentioning

confidence: 99%

“…12,13) Si-, SiC-, and C-dots were fabricated by very simple hot-ion implantations of single Si + , double Si + /C + , and single C + , respectively, and a post N 2 annealing was carried out to improve the dot quality. 13) The dots had diameter Φ of approximately 2-4 nm and surface density N of approximately 2 × 10 12 cm −2 . 8,9,[11][12][13] Photoluminescence (PL) intensity (I PL ) of SiC-dots in Si was two orders of magnitude larger than that of 2D-Si.…”

Section: Introductionmentioning

confidence: 99%

“…13) The dots had diameter Φ of approximately 2-4 nm and surface density N of approximately 2 × 10 12 cm −2 . 8,9,[11][12][13] Photoluminescence (PL) intensity (I PL ) of SiC-dots in Si was two orders of magnitude larger than that of 2D-Si. 8) In addition, we demonstrated that the PL emission coefficient η of SiC-QD in OX was approximately 2.5 times larger than that of SiC-dots in Si, because of quantum confinement effects of electrons in SiC-QD.…”

Section: Introductionmentioning

confidence: 99%

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Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Mizuno¹,

Murakawa²,

Yoshimizu³

et al. 2022

Jpn. J. Appl. Phys.

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We experimentally studied the influence of both impurity density and dangling-bond density on PL emissions from group-IV-semiconductor quantum-dots (IV-QDs) of Si and SiC fabricated by hot-ion implantation technique, to improve the PL intensity (IPL) from IV-QDs embedded in two types of insulators of quartz glass (QZ) with low impurity density and thermal-oxide (OX) layers. First, we verified the IPL reduction in the IV-QDs in QZ. However, we demonstrated the IPL enhancement of IV-QDs in doped QZ, which is attributable to multiple-level emission owing to acceptor and donor ion implantations into QZ. Secondly, we confirmed the large IPL enhancement of IV-QDs in QZ and OX, owing to forming gas annealing with H2/N2 mixed gas, which are attributable to the reduction of the dangling-bond density in IV-QDs. Consequently, it is possible to improve the IPL of IV-QDs by increasing impurity density and reducing dangling-bond density.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Mizuno¹,

Murakawa²,

Yoshimizu³

et al. 2022

Jpn. J. Appl. Phys.

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Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C+-ion implantation technique

Mizuno

Aoki

Sameshima

2022

Journal of Applied Physics

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We experimentally investigated the Si surface orientation dependence of SiC-dot formation and photoluminescence (PL) properties in three (100)-, (110)-, and (111)-bulk-Si substrates (C+–Si) with different surface densities of Si atoms (NS), where SiC-dots were fabricated by a hot-C+ ion implantation into bulk-Si and post-N2 annealing processes. Transmission electron microscopy observation and x-ray photoelectron spectroscopy revealed the formation of SiC-dots in the (110)- and (111)-C+–Si, in addition to (100)-C+–Si. The diameter (Φ) and surface density (ND) of the SiC-dots depended on the Si surface orientation, and the average Φ of the SiC-dots in three surface-oriented C+–Si decreased from approximately 5–3 nm with increasing NS because the trapping value of C-ions at SiO2/Si interface increased with increasing NS, which leads to the reduction of C-ions to convert SiC-dots in the SiC-dot formation area under higher NS condition. However, the UV-Raman intensity of the TO mode of Si−C vibration was nearly independent of NS. We experimentally confirmed the PL emissions from the (110)- and (111)-C+–Si in addition to the (100)-C+–Si. As a result, the PL spectrum and PL emission coefficient (η) of the SiC-dots strongly depended on the Si surface orientation. The PL intensity IPL of the SiC-dots strongly depended on the NS because the η of the SiC-dots significantly increased with decreasing Φ, although SiC-dots in Si substrate are not quantum dots. Consequently, IPL of SiC-dots can be improved in a Si substrate with higher NS.

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Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Mizuno

Murakawa

Sameshima

2023

Journal of Applied Physics

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In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si1 –xGe x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge+/Si+ hot-ion implantation into a SiO2 layer with larger bandgap EG and the post-furnace annealing. We successfully demonstrated the near-infrared (IR) photoluminescence (PL) from Si1 –xGe x-QDs. Transmission electron microscopy observations of single-crystallized Si1 –xGe x-QDs revealed that the diameter and the QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 1012 cm−2, respectively. In addition, Ge atoms were detected in the Si1 –xGe x-QDs by the energy dispersive x-ray spectroscopy analysis, and the Ge fraction of Si1– xGe x-QDs was varied from 0.06 to 0.26 by changing the Ge ion dose. The increase in the PL intensity by forming gas annealing was attributed to the dangling-bond reduction by the H-atom termination method. The PL spectrum of Si1 –xGe x-QDs was fitted by PL components of two QD structures containing Si1 –xGe x and Si materials. The PL intensity and PL-peak photon energy of Si1 –xGe x-QDs strongly depended on the Ge fraction. The Si1 –xGe x-QDs achieved the maximum PL intensity at x ≈ 0.13. High PL-peak photon energy (∼1.31 eV) of Si1 –xGe x-QDs is attributed to the quantum confinement effect of carriers in QDs. Consequently, group-IV semiconductor QDs including Si1 –xGe x, Si, SiC, and C, through the simple hot-ion implantation into the SiO2 layer, exhibited a wide range of PL emissions from the near-IR to ultraviolet regions.

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Group-IV-semiconductor quantum-dots in thermal SiO₂ layer fabricated by hot-ion implantation technique: different wavelength photon emissions

Cited by 5 publications

References 32 publications

Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C+-ion implantation technique

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

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Group-IV-semiconductor quantum-dots in thermal SiO2 layer fabricated by hot-ion implantation technique: different wavelength photon emissions

Cited by 5 publications

References 32 publications

Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C+-ion implantation technique

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

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Group-IV-semiconductor quantum-dots in thermal SiO₂ layer fabricated by hot-ion implantation technique: different wavelength photon emissions