Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

“…The band gap of the sample thus obtained comes out to be 3.43 eV. This value is higher than that reported by Keskenler et al [13], Marotti et al [27] and Srinivasan and Kumar [28]. They found the optical band gap of ZnO film on p-type silicon prepared with solgel spin coating method to be equal to 3.27 eV.…”

“…Various diffraction peaks indicate the formation of hexagonal wurtzite structure in PLD grown ZnO film. Keskenler et al [13] and Periasamy et al [18] reported almost similar result for ZnO thin film prepared on p-type Si substrate by solgel spin coating and vacuum evaporation techniques, respectively. Table 1 shows the lattice parameters estimated from various X-ray diffraction peaks using the relation, …”

“…Developing a high performance ZnO based optoelectronic devices requires forming perfect Schottky or Ohmic contacts between ZnO and deposited metal. The ZnO thin film have been deposited using a number of different techniques such as pulsed laser deposition (PLD) [6], radio frequency (RF) magnetron sputtering [7,8], chemical vapour deposition (CVD) [9,10], spray pyrolysis [11] and sol-gel spin coating technique [12,13]. Among these, the PLD technique is very unique for the growth of oxide materials because the oxygen plasma created by the pulsed laser is very energetic and its density is easily controllable by changing the oxygen pressure.…”

“…Zhang et al [20] studied the Ag/ZnO Schottky barrier diodes on F-doped SnO 2 glass substrates and determined the barrier height to be 0.85 and 1.68 eV (100 kHz) by current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. Keskenler et al [13] studied the Ag/ZnO/pSi/Al Schottky diode fabricated by sol-gel method. Phase identification, energy band gap (3.27 eV) and barrier height (0.76 eV) studied by X-ray diffraction, UV-Visible spectroscopy and current-voltage measurement, respectively.…”

Optimization and characterization of NiO thin film and the influence of thickness on the electrical properties of n-ZnO nanorods/p-NiO heterojunction

“…To realize the ZnO-based pn heterojunctions, some researchers have grown n-ZnO nanostructures on other ptype substrates such as GaN [5][6][7], SiC [8,9], GaAs [10,11], Si [12]. Because of the similarity between the hexagonal and the cubic crystal forms, good lattice matching conditions may be expected if the cubic lattice edge is √2 times the hexagonal lattice constant (a-axis) and the c-axis is grown perpendicular to the (111) plane [13].…”