Growth and characterization of CdTe by close spaced sublimation on metal substrates

Seth, Ajit; Lush, G.B.; McClure, Joshua P.; Singh, Vijay Pratap; Flood, Dennis J.

doi:10.1016/s0927-0248(99)00029-x

Cited by 45 publications

(20 citation statements)

References 6 publications

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“…In this case, much quantity of Cd 0.8 Zn 0.2 Te source was deposited at a deposition rate of 2.00 mm/h at 700 C and we use this condition [9]. Figure 1 shows the XRD spectra of ITO [10] and CdZnTe films grown at different substrate temperatures.…”

Section: Resultsmentioning

confidence: 99%

Growth of Polycrystalline Cd0.8Zn0.2Te Thick Films for X-Ray Detectors

Kwon¹,

Shin²,

Choi³

et al. 2002

phys. stat. sol. (b)

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Cd 1-x Zn x Te is known as promising medical X-ray detector material but CdZnTe as a single crystal is not available in large sizes. As an alternative to single crystal, CdZnTe thick film was grown by vacuum thermal evaporator to 100 mm thickness. The characteristics of thick films were analyzed by XRD, EDS, SEM and current-voltage measurements. Zn composition is x = 0.2 and resistivity is higher than 10 9 W cm.Introduction The physical properties of CdZnTe such as large energy gap, high atomic number, high quantum efficiency, good charge transport and high resistivity, make that it is an attractive material for X-ray detectors. But, to obtain CdZnTe single crystals of uniform and large by the high pressure Bridgman method is very difficult. Such material finds application in mammography [1] that requires panel-shaped X-ray detectors. As an alternative to single crystals [2], we have grown large area polycrystalline CdZnTe films by a thermal evaporation method. The grown CdZnTe films must possess high resistivity to decrease noise and a reasonable thickness to generate enough e-h pairs by incident Xrays in the material. Previous research on CdZnTe material was mainly focused on g-ray detector material or HgCdTe single crystals. In this work, we present the procedure of polycrystalline CdZnTe film growth and the variation of resistivity according to grain size.

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Section: Resultsmentioning

confidence: 99%

Growth of Polycrystalline Cd0.8Zn0.2Te Thick Films for X-Ray Detectors

Kwon¹,

Shin²,

Choi³

et al. 2002

phys. stat. sol. (b)

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“…[1][2][3][4][5][6] CdTe has a direct band gap of 1.53 eV at 300 K 7 and is a common material used for the absorber layer in the fabrication of solar cells. 6 For solar cell applications, polycrystalline CdTe films are typically grown by close-spaced sublimation (CSS), which uses a low cost reactor and has relatively high growth rates (>1 lm/h).…”

Section: Introductionmentioning

confidence: 99%

“…6 For solar cell applications, polycrystalline CdTe films are typically grown by close-spaced sublimation (CSS), which uses a low cost reactor and has relatively high growth rates (>1 lm/h). [1][2][3][4] Polycrystalline CdTe has been observed to grow predominately in the (111) orientation, based on studies related to solar cell research. 3,5,6 Bulk grown CdTe was initially used as a substrate for the epitaxial growth of mercury cadmium telluride (HgCdTe), an important infrared (IR) semiconductor.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] Polycrystalline CdTe has been observed to grow predominately in the (111) orientation, based on studies related to solar cell research. 3,5,6 Bulk grown CdTe was initially used as a substrate for the epitaxial growth of mercury cadmium telluride (HgCdTe), an important infrared (IR) semiconductor. [8][9][10] However, CdTe has a small lattice mismatch with mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) HgCdTe.…”

Section: Introductionmentioning

confidence: 99%

“…The (111) orientation was chosen for the exploration of optimum CSS parameters due to the predominance of the (111) orientation observed for polycrystalline CdTe films using the CSS technique. 3,5,6 The film morphology observed by scanning electron microscopy (SEM) was used as an indication of the quality of film growth and was correlated to the film structure based on x-ray diffraction (XRD) results. The effect of pressure, a pre-growth heat treatment step, and in situ annealing treatment on the film quality is also reported.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

Escobedo

Quinones

Adame

et al. 2010

Journal of Elec Materi

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Thin epitaxial CdTe films were grown on CdTe(111)B substrates by the close-spaced sublimation (CSS) technique and were characterized over a range of experimental parameters. The source temperature was varied between 480°C and 540°C, maintaining an average constant source-substrate temperature difference DT of $130°C. Helium was used as a carrier gas at pressures between 2 Torr and 10 Torr. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to analyze the film morphology and structure. Growth rates ranging from 1 lm/h to 4 lm/h were observed, based on profilometer thickness measurements. The addition of a pre-growth heat treatment step and post-growth annealing treatment resulted in smooth CdTe (111) films. An evolution in growth morphology was demonstrated with SEM images and film quality was confirmed with XRD.

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Novel Materials‐Based Flexible Solar Cells

Liu

Kim

et al. 2019

Inorganic Flexible Optoelectronics

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Growth and characterization of CdTe by close spaced sublimation on metal substrates

Cited by 45 publications

References 6 publications

Growth of Polycrystalline Cd0.8Zn0.2Te Thick Films for X-Ray Detectors

Growth of Polycrystalline Cd0.8Zn0.2Te Thick Films for X-Ray Detectors

Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

Novel Materials‐Based Flexible Solar Cells

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