2020
DOI: 10.3390/ma13061471
|View full text |Cite
|
Sign up to set email alerts
|

Growth and Characterization of Cu2Zn1−xFexSnS4 Thin Films for Photovoltaic Applications

Abstract: Photovoltaics is a promising technology to produce sustainable energy, thanks to the high amount of energy emitted by the sun. One way of having solar cells with low production costs is to apply thin-film technology and with earth-abundant raw materials. A keen interest is arising in kesterite compounds, which are chalcogenides composed of abundant and non-toxic elements. They have already achieved excellent performance at the laboratory level. Here, we report the synthesis and characterization of mixed chalco… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
4
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 16 publications
(4 citation statements)
references
References 46 publications
0
4
0
Order By: Relevance
“…However, no pronounced enhancement of the band gap has been reported for this methodology, which does not exceed values around 1.5–1.6 eV. 12 15 On the other hand, studies of Cu substitution with Ag or Li have been attempted successfully with the remarkable growth of the band gap (until 1.8 eV) but with the disadvantage to complicate the whole production procedure by using precursors that are more expensive or in other cases more difficult to handle. 16 , 17 Last but not least, in the last few years, Sn substitution with Ge have drawn the attention of the PV research community due to the extremely high band gap reachable, especially with the completely Ge-substituted pure-sulfide kesterite version.…”
Section: Introductionmentioning
confidence: 62%
See 1 more Smart Citation
“…However, no pronounced enhancement of the band gap has been reported for this methodology, which does not exceed values around 1.5–1.6 eV. 12 15 On the other hand, studies of Cu substitution with Ag or Li have been attempted successfully with the remarkable growth of the band gap (until 1.8 eV) but with the disadvantage to complicate the whole production procedure by using precursors that are more expensive or in other cases more difficult to handle. 16 , 17 Last but not least, in the last few years, Sn substitution with Ge have drawn the attention of the PV research community due to the extremely high band gap reachable, especially with the completely Ge-substituted pure-sulfide kesterite version.…”
Section: Introductionmentioning
confidence: 62%
“…In this context, the need to produce high-band-gap materials to be used as top cells in tandem architectures , has addressed the research toward the substitution of Zn with Fe, Mn, or Co in pure-sulfide CZTS solar cells, given that selenium is known for lowering the energy gap. However, no pronounced enhancement of the band gap has been reported for this methodology, which does not exceed values around 1.5–1.6 eV. On the other hand, studies of Cu substitution with Ag or Li have been attempted successfully with the remarkable growth of the band gap (until 1.8 eV) but with the disadvantage to complicate the whole production procedure by using precursors that are more expensive or in other cases more difficult to handle. , Last but not least, in the last few years, Sn substitution with Ge have drawn the attention of the PV research community due to the extremely high band gap reachable, especially with the completely Ge-substituted pure-sulfide kesterite version. Several works report different compositions of Cu 2 ZnSn x Ge 1– x (S,Se) 4 (CZTGSSe) and relate them to the optical and physical properties of the final absorber. The results were interesting, especially in pure sulfide CZTGS where band-gap values ranging from 1.5 (for CZTS) to 2.1 eV (pure CZGS) have been registered. , Many different deposition techniques have been used, but no one allowed to reach remarkable results in terms of solar device performances for very high band gaps, exceeding 1.7 eV.…”
Section: Introductionmentioning
confidence: 99%
“…The peaks for Fe 2p 1/2 and Fe 2p 3/2 are located at 724.5 and 711.0 eV (Figure 2e), which is indicative of Fe(II), and similar to previous measurements on Cu 2 FeSnS 4 and Cu 2 Zn 1−x Fe x SnS 4 thin films. 50,51 The Cd 3d 3/2 and Cd 3d 5/2 peaks are located at 411.6 and 404.9 eV (Figure 2f) and can be attributed to Cd(II). The shifts of the Cu, Zn, Sn, and S spectral features and the presence of Fe and Cd peaks in the XPS spectra for the CZFCTS thin films provide further evidence for the successful introduction of Fe and Cd into the CZTS lattice.…”
Section: Compositional Analysis and Structural Propertiesmentioning
confidence: 99%
“…Copper chalcogenides are denoted by a wide scope of application in various devices, such as solar cells, superionic conductors, photodetectors, photo-thermal converters, electroconductive electrodes, microwave shielding, coating, thermoelectric cooling, and optical filters. They also act as an optical recording material [13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%