Growth and characterization of Ga2Se3 by molecular beam epitaxy

Teraguchi, N.; Konagai, Makoto; Kato, F.; Takahashi, Kiyoshi

doi:10.1016/0022-0248(91)90848-y

Cited by 20 publications

(11 citation statements)

References 6 publications

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“…The ordered structure of In 2 Te 3 as suggested by Wooley et al [27] is often used to represent the structure of ortho-Ga 2 Se 3 . Its structure has been shown in [18,19,26,28,29]. Our calculations for ortho-Ga 2 Se 3 are based on this structure.…”

Section: General Descriptions Of the Crystal Structurementioning

confidence: 79%

“…Some consistent experimental and theoretical evidence exists to support the existence of the orthorhombic Ga 2 Se 3 . Teraguchi et al [23,28] found that the diffraction patterns of their samples can be explained based on the orthorhombic structure. Okamoto et al [76,77] found the bandgap of the same (vacancy-ordered) sample is almost the same as that of the bulk sample, 2.1 eV, and observed that there exists anomalous absorption anisotropy along [110] and [1 10].…”

Section: General Descriptions Of the Crystal Structurementioning

confidence: 99%

“…Teraguchi et al [28] reported that the lattice constant of the vacancyordered Ga 2 Se 3 epitaxial layer is 5.50 Å. It is unclear whether it is the lattice constant parallel to the substrate (a = b) or the lattice constant perpendicular to the substrate (c).…”

Section: Vacancymentioning

confidence: 99%

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First-principles study of the structure and band structure of Ga₂Se₃

Huang

Abdul-Jabbar

Wirth

2013

J. Phys.: Condens. Matter

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Our first-principles calculations show that the ordering of stoichiometric cation vacancies in Ga2Se3 has a large influence on the bandgap, up to 0.55 eV. Therein, the zigzag-line vacancy-ordered Ga2Se3 has the maximum bandgap (∼2.56 eV direct bandgap), and the straight-line vacancy-ordered Ga2Se3 has the minimum bandgap (∼1.99 eV indirect bandgap) at 0 K, according to scGW calculations. The bandgap difference (0.55 eV) is almost the same for normal density functional theory (DFT) calculations, hybrid DFT calculations and GW calculations. The calculation results are consistent with the experimental bandgap range of 2.0-2.6 eV at room temperature. Also, hydrostatic pressure (<9 GPa) tends to increase the bandgap, consistent with the experiments in the literature.

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Section: General Descriptions Of the Crystal Structurementioning

confidence: 79%

Section: General Descriptions Of the Crystal Structurementioning

confidence: 99%

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First-principles study of the structure and band structure of Ga₂Se₃

Huang

Abdul-Jabbar

Wirth

2013

J. Phys.: Condens. Matter

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“…Ga 2 Se 3 has a cubic zinc-blende structure with a lattice parameter of 5.418 Å. 10 The ͑111͒ surface of Ga 2 Se 3 has hexagonal order and a reciprocal lattice spacing which is only 2.2% smaller than the c plane of GaSe; this make it difficult to distinguish between the two materials with RHEED observations alone. It is also possible that the film has a similar structure to that of the corundum substrate, although that structure is not known to exist for a Ga-Se compound.…”

Section: Discussionmentioning

confidence: 99%

Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)

Chegwidden

Dai

Olmstead

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We have investigated the growth of GaSe, a layered semiconductor, on single crystal Al 2 O 3 (0001)͑sapphire͒, an ionic crystal. We have used reflection high energy electron diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy and diffraction to study the growth, interface reaction, and resultant film structure. When a clean, heated (Tϭ620°C) sapphire substrate is exposed to Ga and Se from a compound GaSe source (Ga 2 Se and Se 2) and a separate uncracked Se source (Se x , xϳ6), a polycrystalline film is formed with stoichiometry close to that of cubic Ga 2 Se 3. After annealing to 1100°C, the film evaporates, leaving a reacted interface layer containing both Ga and Se. Subsequent deposition on this reacted surface under the same conditions leads to growth of 500-1000 Å grains of layered GaSe, which have their c axis normal to the substrate surface but random orientation parallel to the substrate. A mechanism is proposed that describes the formation of the interface layer and its effect on the subsequent growth of GaSe.

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“…5 The physical properties of Ga 2 Se 3 are not well established yet. Ordering of vacancies at low temperature has been demonstrated both in the bulk phase ͑the ordered structure is known as ␤-Ga 2 Se 3 ) 1,3 and in the epitaxial phase grown on the lattice-matched GaP͑001͒ substrates, 9 as well as on the lattice-mismatched GaAs or ZnSe͑001͒ substrates. 10 Two superstructures-orthorhombic 1 and monoclinic 3 -due to different possible ordering of vacancies have been proposed for the bulk phase and for the epitaxial phase on GaP.…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of Ga2Se3

Peressi

Baldereschi

1998

Journal of Applied Physics

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Articles you may be interested inAb initio studies of 1,3,5,7-tetranitro-1,3,5,7-tetrazocine/1,3-dimethyl-2-imidazolidinone cocrystal under high pressure using dispersion corrected density functional theory Electronic structure, chemical bonding features, and electron charge density of the double-cubane single crystal [ Sb 7 S 8 Br 2 ] ( AlCl 4 ) 3 Appl. Phys. Lett. 98, 201903 (2011); 10.1063/1.3583674 Electronic structure and optical properties of Sb-doped SnO 2

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Growth and characterization of Ga2Se3 by molecular beam epitaxy

Cited by 20 publications

References 6 publications

First-principles study of the structure and band structure of Ga₂Se₃

First-principles study of the structure and band structure of Ga₂Se₃

Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)

Structural and electronic properties of Ga2Se3

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Growth and characterization of Ga2Se3 by molecular beam epitaxy

Cited by 20 publications

References 6 publications

First-principles study of the structure and band structure of Ga2Se3

First-principles study of the structure and band structure of Ga2Se3

Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)

Structural and electronic properties of Ga2Se3

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Product

Resources

About

First-principles study of the structure and band structure of Ga₂Se₃

First-principles study of the structure and band structure of Ga₂Se₃