2005
DOI: 10.1016/j.jcrysgro.2004.11.338
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Growth and characterization of gallium nitride nanowire

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Cited by 10 publications
(2 citation statements)
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“…Fig. 1 shows the experimental set-up for the growth of GaN nanocrystals [10]. GaN nanocrystals were prepared from a mixture of metal gallium and GaN powder kept in an alumina boat covered with B 2 O 3 placed in a quartz reactor.…”
Section: Methodsmentioning
confidence: 99%
“…Fig. 1 shows the experimental set-up for the growth of GaN nanocrystals [10]. GaN nanocrystals were prepared from a mixture of metal gallium and GaN powder kept in an alumina boat covered with B 2 O 3 placed in a quartz reactor.…”
Section: Methodsmentioning
confidence: 99%
“…Synchrotron X-ray diffraction was used in this experiment to determine the structures of novel nitrides. Other nitrides like GaN were also studied by suitable surface treatment, GaN nanodimensional structures have been realized on (0 0 0 1) sapphire substrates by Vipul Srivastava et al [7]. To the best of our knowledge, there are few discussions on the electronic structure of IrN 2 , especially on the bonding nature in the crystal under high pressure.…”
Section: Introductionmentioning
confidence: 99%