Growth and Characterization of High Efficiency GaAlAs/GaAs/Ge Solar Cells

Timò, Gianluca; Flores, C.; Campesato, R.; Passoni, D.; Bollani, B.

doi:10.4028/www.scientific.net/msf.203.97

Cited by 3 publications

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“…Generally, the MDs are seen at the heterointerface if the film thickness is greater than the critical thickness (290 nmϽt c Ͻ450 nm͒. 38 Franzosi et al 32 observed that the epilayer crystal quality is strongly affected by the growth rate; layers grown at low growth rate ͑1 m/h͒ exhibit planar defects, which are not found to be present in films grown at high deposition rates ͑10 m/h͒. It has been recently argued that lattice mismatch plays only a minor role in the formation of planar defects such as twins and stacking faults.…”

Section: A Cross-sectional Tem Observation Of the Gaasõge Heterointementioning

confidence: 99%

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Hudait

Krupanidhi

2001

Journal of Applied Physics

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The self-annihilation of antiphase boundaries ͑APBs͒ in GaAs epitaxial layers grown by low-pressure metal-organic vapor-phase epitaxy on Ge substrates is studied by several characterization techniques. Cross-sectional transmission electron microscopy shows that antiphase domain free GaAs growth on Ge was possible due to the proper selection of the growth parameters. The antiphase boundaries annihilate with each other after a thick 3 m layer of GaAs growth on a Ge substrate as observed by scanning electron microscopy studies. Double crystal x-ray diffraction data shows a slight compression of GaAs on Ge, and the full width at half maximum decreases with increasing growth temperatures. This confirms that the APBs annihilate inside the GaAs epitaxial films. Low temperature photoluminescence measurements confirm the self-annihilation of the APBs at low temperature growth and the generation of APBs at higher growth temperatures.

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Section: A Cross-sectional Tem Observation Of the Gaasõge Heterointementioning

confidence: 99%

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Hudait

Krupanidhi

2001

Journal of Applied Physics

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“…Ge bottom cell, however, has to be optimised by selecting a proper "nucleation layer", that is a suitable buffer material to be grown between the substrate and the active region of the device. The nucleation layer plays a fundamental role in the formation of the bottom cell junction and it has the function of passivating its surface [5]. In this paper we focalise our attention on the growth GaAs, AlGaAs and InGaP semiconductors, grown by different reactors, as nucleation layer candidates for bottom Ge cells.…”

Section: Introductionmentioning

confidence: 99%

Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells

Timò¹,

Flores

Campesato

2005

Cryst. Res. Technol.

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The paper discusses the problems of nucleation layer and substrate specification selection for a bottom Ge cell performance. GaAs/Ge, AlGaAs/Ge and InGaP/Ge heterojuctions have been compared showing how lattice matching and dopant interdiffusion control are key aspects for improving the Ge bottom cell photovoltaic response. The influence of substrates orientation, polarity and resistivity on the electrical performances of the bottom cells are presented.

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Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

Hudait

Krupanidhi

2000

Materials Research Bulletin

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Growth and Characterization of High Efficiency GaAlAs/GaAs/Ge Solar Cells

Cited by 3 publications

References 0 publications

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells

Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

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