Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

Self-assembled In(Ga) As islands on Ge substrate

“…Another problem is the diffusion of Ga and As into the Ge substrate, [9] both of which act as dopant atoms in germanium. Various buffer layers have been shown to enhance the quality of GaAs grown on a Ge substrate [7,10]. Self-assembled islands can be used to improve the buffer layer.…”

Structure of the (110) antiphase boundary in gallium phosphide

“…Such defects in compound semiconductors were discussed by Holt (1969) referring to an experimental study of defects in GaAs grown on Ge (Bobb et al ., 1966). Because of the technological interest in the growth of GaAs on Si and Ge for opto‐electronic and photovoltaic applications (Carter et al ., 1986; Sieg et al ., 1998; Ting et al ., 1998; Xu & Hsu, 1999a; Ting & Fitzgerald, 2000), the structure of APBs in compound semiconductors has since been the subject of numerous experimental studies (Ebert et al ., 1962; Holt et al ., 1996; Bowler & Goringe, 1998; Xu & Hsu, 1999b; Hudait & Krupanidhi, 2000).…”

III–V-N compounds for multi-junction solar cells on Si

“…Bandgap energy of GaAsPN estimated by using model solid theory and band anti-crossing model under the lattice matching condition to Siphenomenon has been observed in heteroepitaxy of III-nitrides on Si[15] and GaAs on Ge[16]. In order to eliminate the growth pit by the melt-back etching, suppression of Ga droplets by increasing the formation rate of GaP nuclei is effective.…”