Growth and characterization of lead-tin telluride epitaxial layers

Abstract

Pb1−xSnxTe single crystal epitaxial layers have been grown from metal‐rich solutions on single crystal Pb1−xSnxTe substrates. The layers were grown from melts containing 0.01 to 0.20 atomic fraction tellurium at temperatures from 500 to 750 °C on both 〈111〉 and 〈100〉 oriented substrates. Characterization of the layers was by X‐ray, optical, electrical, and etching techniques. Liquidus curves covering the metallic side of the phase diagram were established. Diodes were fabricated from several of the layers using the grown‐in junction and were compared with diffused junction diodes prepared from the same substrate material. Incremental resistance values were observed for PbTe and Pb0.83Sn0.17Te diodes at 77 °K that were up to an order of magnitude larger than those observed for diffused diodes.

Narrow Gap Semiconductors

“…65 Of particular interest is the solidus sheet which is represented by the parallel slanted lines. 90 At lower temperatures the separation increases to values sub stantially larger than the 7 mole % SnTe indicated in the previous sentence. 10, the deviations from stoichiometry in the solid phase (solidus sheet) are neglected.…”

“…In early work on the alloys, the closed tube vapor growth and vertical Bridgman techniques 88 were used. 90 ' 93-9 5 Horizontal open tube vapor phase epitaxial growth 96 in a hydrogen stream has been developed. A vertical closed tube vapor growth technique 92 using a small temperature differential was developed for the growth of cubically shaped crystals suitable for the fabrication of diode lasers.…”

Far infrared and submillimeter range photosensitive devices based on Pb 1-x Sn x Te<In> films: results and perspectives

“…Due to a iO- 10- highly matched combination of physical properties, BaF 2 monocrystals have been used for a long time as the insulating substrates for A 4 B 4 film growth by hot wall technique 13) , molecular beam epitaxy (MBE) 14) , flash vaporization 15) . Nevertheless, the most of known results are obtained using BaF 2 (111) cleavages.…”