2003
DOI: 10.1016/s1293-2558(03)00021-9
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Growth and dielectric characterization of large single crystals of GaAsO4, a novel piezoelectric material

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Cited by 35 publications
(25 citation statements)
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“…The percentage error compared with the experimental data are given in parenthesis. reported that the smaller h is, the better the compound perform as a piezoelectric candidate will be [18]. Fortunately, three compounds of our results follow the trend.…”
Section: Optimized Structure and The Bridging Angle Hsupporting
confidence: 74%
“…The percentage error compared with the experimental data are given in parenthesis. reported that the smaller h is, the better the compound perform as a piezoelectric candidate will be [18]. Fortunately, three compounds of our results follow the trend.…”
Section: Optimized Structure and The Bridging Angle Hsupporting
confidence: 74%
“…Single crystals were grown for the first time by hydrothermal methods by using 11.5 M H 3 AsO 4 as the solvent. High quality crystals with well-defined faces were obtained by nucleation [89]. The OH-defect content was quantified by infra-red spectroscopy, confirming the high crystalline quality of the material, thereby allowing the first physical characteristics, like the free-stress dielectric constants of GaAsO 4 , to be measured (ε 11 = 8.5, ε 33 = 8.6).…”
Section: Gaaso 4 Single Crystalsmentioning
confidence: 68%
“…Two main classes of materials have been developed: (i) the piezo‐electric materials with quartz like‐structures2730 such as AlPO 4 , GaPO 4 , GaAsO 4 , and (ii) materials characterized by specific optical properties such as A Be 2 BO 3 F 2 (with A = K, Rb, Cs, Tl…),31 K M O 3 ( M = Nb, Ta),32 calcite CaCO 3 ,33 γ‐LiBO 2 ,34, KTiOPO 4 35…”
Section: Recent Developments In Solvothermal Crystal Growth Of Materialsmentioning
confidence: 99%