Growth and doping of semipolar GaN grown on patterned sapphire substrates

Scholz, F.; Meisch, Tobias; Caliebe, Marian; Schörner, S.; Thonke, Klaus; Kirste, Lutz; Bauer, Sondes; Lazarev, Sergey; Baumbach, Tilo

doi:10.1016/j.jcrysgro.2014.08.006

Cited by 30 publications

(57 citation statements)

References 22 publications

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“…). Hence, the Mg incorporation efficiency on the GaN crystal plane

{10 \bar{1} 1}

is higher than that on

{11 \bar{2} 2}

, confirming similar findings on planar semipolar layers . The Mg incorporation efficiency is not directly comparable between the planar c ‐plane and the 3D semipolar structures due to the different surface morphologies.…”

Section: Resultssupporting

confidence: 66%

Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes

Wang

Gao

Alam

et al. 2014

Phys. Status Solidi A

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The effects of different Mg doping concentrations in the main p‐GaN layer and the p‐GaN capping layer on the electroluminescence (EL) properties of three‐dimensional semipolar InGaN/GaN light emitting diode structures grown on GaN stripes with triangular cross‐section were investigated. Secondary ion mass spectrometry analysis revealed the Mg concentration of the 3D semipolar p‐GaN, indicating a higher Mg incorporation efficiency on the {101¯1} facet as compared to the {112¯2} facet. The EL output power is low with a too low Mg concentration of 3 × 1019 cm−3, probably due to the inferior hole injection efficiency and stays almost constant with the Mg concentration ranging from 4 × 1019 cm−3 until 1.3 × 1020 cm−3 for the 3D LEDs with the {101¯1} facet. Heavy Mg doping in the p‐GaN capping layer is required to achieve good ohmic contact performance.

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“…). Hence, the Mg incorporation efficiency on the GaN crystal plane

{10 \bar{1} 1}

is higher than that on

{11 \bar{2} 2}

Section: Resultssupporting

confidence: 66%

Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes

Wang

Gao

Alam

et al. 2014

Phys. Status Solidi A

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“…Table 1 summarizes the XRD and AFM data that can be achieved using the various approaches discussed in this work and compared them to typical results on patterned substrate from Refs. [31][32][33][34]. Overall, the method using AlN nucleation combines a narrow XRD ω FWHM with a smooth surface.…”

Section: Resultsmentioning

confidence: 99%

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Pristovsek

Frentrup

Han

et al. 2015

Physica Status Solidi (b)

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The hetero‐epitaxy of (11true2‾2) GaN on (10true1‾0) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low‐temperature AlN interlayers (ILs) as well as a SiNx IL. X‐ray diffraction (XRD) of ω scans of the symmetric (11true2‾2) reflection yielded an ω FWHM <450″ along [11true2‾true3‾] and <900″ along [10true1‾0] together with a 100×100thinmathspaceμm2 rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was ≈109cm−2 while the basal plane stacking fault density was in the lower 105cm−1 range as determined by transmission electron microscopy. The suppression of the unwanted (10true1‾true3‾) phase was lower than 1 in 10,000 as judged from XRD.

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“…The ð11 22Þ GaN templates with the low BSF density (<4 Â 10 3 cm À1 ) were grown on patterned r-plane sapphire substrates. 36 The ð11 22Þ GaN templates with the high BSF density (%(3.2 6 0.3) Â 10 5 cm À1 ), which are mainly discussed here, were grown on m-plane sapphire. 7,19 Both InGaN quantum wells (%4-10 nm) and single layers (%30 nm) with 15%-23% In-content grown on the two different GaN templates show similar RT-PL emission wavelengths indicating that the effect of BSFs on the redshift of the ð11 22Þ InGaN NBE is weak.…”

Section: Optical Propertiesmentioning

confidence: 99%

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Dinh

Oehler

Zubialevich

et al. 2014

Journal of Applied Physics

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InGaN layers were grown simultaneously on (112¯2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content (<15%) of the (112¯2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112¯2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112¯2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112¯2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112¯2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

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Growth and doping of semipolar GaN grown on patterned sapphire substrates

Cited by 30 publications

References 22 publications

Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes

Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

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