“…-Ga 2 O 3 is the most stable phase among the five polymorphs [, , , and " () phases] of Ga 2 O 3 under ambient conditions (Playford et al, 2013;Roy et al, 1952). It has a wide band gap (4.4-4.8 eV;Onuma et al, 2015), a high critical breakdown electric field (8 MV cm À1 ; Higashiwaki et al, 2012) and a very good transparency (>80% transmittance) in the ultraviolet and visible regions (Galazka et al, 2014), and is readily manufacturable via sophisticated growth technologies Mohamed et al, 2019). Up to now, various growth technologies have been successfully applied in fabricating large -Ga 2 O 3 bulk single crystals and thin films, including edge-defined film-fed growth (EFG), Czochralski and floating zone crystallization, metal-organic vapour phase epitaxy, and mist chemical vapour deposition (von Wenckstern, 2017;Mohamed et al, 2019), of which EFG is the most popular commercialized technology for bulk -Ga 2 O 3 (Kuramata et al, 2016;Guo et al, 2015).…”