Growth and Properties of LPCVD Titanium Nitride as a Diffusion Barrier for Silicon Device Technology

Abstract

Chemical vapor deposition has been used to deposit titanium nitride (TIN) on silicon wafers at low pressures in a coldwall single-wafer reactor. Experiments are reported for pressures in the range of 100-300 mtorr and temperatures between 450~176with titanium tetrachloride and ammonia as reactants. Both hydrogen and nitrogen are evaluated as diluents. Deposition rates as high as 1000/~/min have been achieved. The chemical nature of the films are evaluated by Auger and RBS techniques, while the morphology is depicted by SEM. For the most part, the films are stoichiometric and contain small quantities of oxygen, chlorine, and hydrogen. Film resistivities as low as 50 ~ll-cm are reported. Behavior of the TiN film as a diffusion barrier between silicon (boron doped) and aluminum, at annealing temperatures up to 550~ is evaluated by measurements of contact resistance and diode leakage.

Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization

“…4 -9 The high-temperature process which uses TiCl 4 /NH 3 chemistry suffers from particle contamination problems and from Cl incorporation in the film, which is of major concern for long-term device reliability. 4,5 Metalorganic CVD has been used to lower the deposition temperature which also providing conformal films. [6][7][8][9] A recent investigation involving interdiffusion in Cu/CVD TiN thin film structures found that the CVD TiN remained stable up to 450°C for 30 min, after which Cu started to diffuse into the TiN layer.…”

Characteristics of TiN thin films grown by ALD using TiCl4 and NH3

“…There are, however, various limitations in employing these methods to prepare TiN thin films for microelectronic use. The processing temperature for TiN films using CVD with TiCl 4 as a source chemical requires a very high temperature, more than 600 o C [3,4]. TiN films prepared by PVD exhibit a poor stepcoverage, which makes them unsuitable for highly integrated devices [2,5].…”

Adhesion of CVD tin on 316l surgical stainless steel obtained in a mass transfer regime

“…This frictional force can be converted into a compressive stress acting on the surface layer by dividing it by the scratch track projected area, A r The frictional force is expressed in terms of the critical load Lc, and the coefficient of friction, ~c, at this load. The final equation which relates the critical normal load with the work of adhesion, W, is given by: 1 L =~LTj (2) where A 1 is equal to:…”