Growth and properties of near‐UV light emitting diodes based on InN/GaN quantum wells

Abstract

Near‐ultraviolet light emitting diodes (LEDs), based on one monolayer thick InN/GaN multiple quantum wells, were grown by radio‐frequency plasma‐assisted molecular beam epitaxy. The active region was grown at 685 °C, a temperature where the growth of thick InN layers is not possible. High resolution transmission electron microscopy revealed that the InN well layers were grown pseudomorphically in between the GaN barriers and were characterized by well defined interfaces and uniform thickness. The LED structures exhibited electroluminescence emission at 384 nm, with a FWHM of about 14 nm. The peak emission wavelength was independent of the injection current, indicating the absence of quantum confined Stark effect in these structures. Output optical power of 0.84 mW was measured at 200 mA in a bare die configuration. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Two-dimensional electron gas in monolayer InN quantum wells

“…A strong CL peak is seen at ~ 400nm or 3.1eV, consistent with previous photoluminescence results 12 . This CL peak energy is much larger than the InN bulk band gap of ~ 0.7eV, and is believed to be due to the quantum confinement effect 12,13 . The second peak at ~ 800nm is probably the second harmonic of the 400nm peak.…”

Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

“…Both photoluminescence [31] and electroluminescence [33] originating from electronhole recombination have been observed. We have estimated that the critical thickness of InN layers pseudomorphically grown on a GaN substrate is as large as 17 A, which corresponds to more than 5 InN MLs [19].…”

MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

“…Further, large band gap discontinuities available in the InN/GaN system make the design of various InN-based heterostructure devices possible. While there are many results on the growth and properties of bulk InN films there are only a few reports on the investigation of InN-based quantum well (QW) structures, usually by molecular beam epitaxy [1][2][3][4][5][6]. Blue and/or near UV emission has been observed from metal organic vapour-phase epitaxy (MOVPE) grown ultra-thin InN or high indium (In) containing InGaN layers within GaN barriers [7][8][9][10].…”