Growth and properties of new ZnSe(Al,O,Te) semiconductor scintillator

Lee, W. G.; Kim, Yong Kyun; Kim, J. K.; Starzhinskiy, N.; Ryzhikov, V. D.; Grinyov, B.

doi:10.1016/j.radmeas.2008.02.008

Cited by 6 publications

(3 citation statements)

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“…Although doping and annealing in Zn do not change the cubic crystal structure of ZnSe but affects lattice constant. The overall study indicates that annealing is a suitable method to improve the structural and scintillation properties of ZnSe based scintillators [111,112]. Luminescent properties of quantum dots were also found improved by annealing.…”

Section: Effect Of Annealing and Heavy Ion Irradiation On Znse Based ...mentioning

confidence: 69%

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A review on the progress of ZnSe as inorganic scintillator

Jagtap

Chopade

Tadepalli

et al. 2019

Opto-Electronics Review

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Modern scintillator detectors act as an efficient tool for detection and measurement of ionizing radiations. ZnSe based materials have been found to be a promising candidate for scintillation applications. These scintillators show much-needed scintillation efficiency along with advantages such as high thermal and radiation stability, less-toxicity, non-hygroscopicity, emissions in the visible range and small decay time etc. Further, in quantum confinement regime, they show improvement in luminescent properties and size dependent emissions. In this review article, the attempt has been made to trace the progress of ZnSe based materials towards highly efficient quantum dot scintillators. Here, the fundamental process of scintillation has been explained. Factors such as doping, annealing, heavy ion irradiation which affects the scintillation response of ZnSe based scintillators have also been discussed. Method of synthesis plays a key role in optimization of quantum dot properties. Hence, it has been tried to trace the development in methods of synthesis of quantum dots. With optimized synthesis, we can extend applications of these highly efficient quantum dot scintillators for various scientific and industrial applications.

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Section: Effect Of Annealing and Heavy Ion Irradiation On Znse Based ...mentioning

confidence: 69%

“…Minimum afterglow is desirable for ideal scintillator and annealing was found suitable to achieve this. It has been found that the afterglow level reduces by several orders of magnitude by annealing [107,112]. The annealing also affects crystal structure parameters.…”

Section: Effect Of Annealing and Heavy Ion Irradiation On Znse Based ...mentioning

confidence: 99%

A review on the progress of ZnSe as inorganic scintillator

Jagtap

Chopade

Tadepalli

et al. 2019

Opto-Electronics Review

View full text Add to dashboard Cite

show abstract

“…The increasing FWHM values and a decrease in lattice parameter values may be due to the structural deformation of induced lattice disorder in implanted ZnSe crystals. The decrease in lattice constant due to implantation may be due to the difference in the ionic radius of N (0.65Å) to that of Zn and Se atoms (1.54 and 1.11Å respectively) [11]. The displacement of Zn and Se are possibly induced by the presence of substitutional N atom and the interatomic distance bond lengths of N-Se and N-Zn are smaller than that of Zn-Se.…”

Section: Resultsmentioning

confidence: 99%