Growth and properties of VPE GaP for green LEDs

Improvement in the minority carrier diffusion lengths has been obtained in GaP:N LED's by controlling the oxygen contamination during LPE with getter dopants such as Al, Mg, or Si. Experimental data are presented which show a limited range in which one can achieve oxygen gettering in GaP without reducing the incorporation of nitrogen. Excess A1 produces free exciton emission with an external quantum efficiency of 0.02% at 4 A/cm 2. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-17 to IP

Section: Resultssupporting

confidence: 76%

mentioning

confidence: 99%

Oxygen Gettering in Green GaP : N LED's Grown by Overcompensated LPE

Mürau

Bhargava

1976

“…Even at 1014 cm -8 the effect on the mobility would be small. A calculation of the mobility limited by N scattering at this doping level (27) yields a mobility many orders of magnitude larger than the polar optical mode scattering limited mobility.…”

Section: Discussionmentioning

confidence: 84%

Hydride VPE Growth of GaAs for FET's

Stringfellow

Hom

1977

Epitaxial layers of GaAs suitable for fabrication of MESFET devices have been grown by the hydride VPE technique (ASH3 + HC1 + Ga + H2). The materials properties and FET characteristics of devices fabricated in this material are similar to those for LPE, and the more common AsCls VPE growth techniques. The uniformity of sheet resistance of this material over a substrate area of --~6.5 cm2 is typically ,~5% (standard deviation from the mean). A new technique has been developed for the growth of buffer layers. The background doping level of 4-9 X 1013 cm -8 is found to be reduced to <1014 cm -~ by the addition of NH3 to the AsHs stream. More complex n+/n/ buffer layer structures have been grown in a single operation by simply programming gas flow rates during the run. * Electrochemical Society Active Member.

“…The PH3-HC1-Ga-H9 system was used to grow the GaP layers. The details have been presented elsewhere (22), but the important feature is that the system is rf heated so all the hot elements which the gases contact are high purity graphite. The LEC GaP substrate, either n + sulfur doped or semi-insulating Cr doped, was oriented 4 ~ off the (100) plane.…”

Section: Methodsmentioning

confidence: 99%

Effect of III/V Ratio on the Properties of Vapor Phase Epitaxial GaP

Stringfellow

Hall

1976

The effect of III/V ratio in the gas stream on the properties of normalGaP grown by the vapor phase epitaxial (VPE) technique has been studied. At the substrate temperature of 840°C, the nitrogen distribution coefficient is found to increase strongly with increasing III/V ratio. Equilibrium thermodynamic calculations explain the dependence well. On the other hand, the residual doping level, believed to be due to S, has the opposite dependence on III/V ratio which is not understood. The minority carrier lifetime and diode efficacy are observed to increase with III/V ratio. An analysis of this behavior indicates the dominant nonradiative recombination center in this material may be a deep acceptor residing on the Ga sublattice, such as Cu or Fe.