Growth and transport properties of tin monosulphoselenide single crystals

Patel, Τ. C.; Vaidya, Rajiv; Patel, Shivam

doi:10.1016/s0022-0248(03)01002-9

Cited by 18 publications

(11 citation statements)

References 33 publications

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“…1 was not attributed to the re-evaporation of the films under increasing growth temperature, but caused by the denser films. The reported SnS densities are 4.6 g/cm 3 (film) [4], 5.05 g/cm 3 (bulk) [21], and 5.27 g/cm 3 (bulk) [22], which shows higher density than our SnS absorber. It is however considered that the film density of our SnS (i.e., crystal qualities) can be further increased by optimizing other growth conditions such as temperature of sulfurization, which will be reported elsewhere.…”

Section: Resultsmentioning

confidence: 97%

Impact of growth temperature on the properties of SnS film prepared by thermal evaporation and its photovoltaic performance

Kawano

Minemoto

2015

Current Applied Physics

105

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Section: Resultsmentioning

confidence: 97%

Impact of growth temperature on the properties of SnS film prepared by thermal evaporation and its photovoltaic performance

Kawano

Minemoto

2015

Current Applied Physics

105

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“…SnS crystallizes in an orthorhombic structure with the lattice parameters a = 0.398 nm, b = 0.433 nm, and c = 1.118 nm [3–5] and can be described as a double layer stacking of Sn and S atoms parallel to the c‐axis. While the in‐plane Sn‐S bonding is relatively tight, the bonding between the layers in c‐direction is of the van der Waal’s type and therefore the bond strength is much lower.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique

Sorgenfrei

Hofherr

Jauß

et al. 2013

Cryst. Res. Technol.

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SnS is a promising candidate as PV absorber material according to the material properties and the Loferski diagram, but despite the numerous publications on this material, the intrinsic material properties are widely unknown and the theoretical possible values for efficiency are still far away from those achieved in reality. Due to the fact that this material is mostly grown as thin film material, bulk research is rare. The material synthesis and the melt growth of tin monosulfide (SnS) by using Bridgman‐Stockbarger technique have been investigated in this study. After first growth experiments produced polycrystalline SnS, a significant reduction of the growth velocity lead to samples with a high amount of single crystalline material. These samples were investigated in detail regarding the structural and optical properties by using XRD/HRXRD, chemical etching and photoluminescence.

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“…Tin mono‐selenide (SnSe) with a layered crystal structure has extensively been studied as a potential thermoelectric material since the discovery of the world‐record ZT up to 2.6 in the single crystal at high T of 926 K. [ 3 ] Pure SnSe is an indirect‐gap semiconductor with a band gap of ≈1.0 eV [ 4 , 5 , 6 , 7 , 8 ] and shows weak p‐type conduction by the hole‐donating Sn vacancies ( V Sn ). [ 9 ] The high ZT is attributed to ultra‐low κ lat due to giant phonon anharmonicity in the layered structure.…”

Section: Introductionmentioning

confidence: 99%

Degenerated Hole Doping and Ultra‐Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution

Zhang

Nose

et al. 2022

Advanced Science

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Tin mono-selenide (SnSe) exhibits the world record of thermoelectric conversion efficiency ZT in the single crystal form, but the performance of polycrystalline SnSe is restricted by low electronic conductivity (𝝈) and high thermal conductivity (𝜿), compared to those of the single crystal. Here an effective strategy to achieve high 𝝈 and low 𝜿 simultaneously is reported on p-type polycrystalline SnSe with isovalent Te ion substitution. The nonequilibrium Sn(Se 1−x Te x ) solid solution bulks with x up to 0.4 are synthesized by the two-step process composed of high-temperature solid-state reaction and rapid thermal quenching. The Te ion substitution in SnSe realizes high 𝝈 due to the 10 3 -times increase in hole carrier concentration and effectively reduced lattice 𝜿 less than one-third at room temperature. The large-size Te ion in Sn(Se 1−x Te x ) forms weak Sn-Te bonds, leading to the high-density formation of hole-donating Sn vacancies and the reduced phonon frequency and enhanced phonon scattering. This result-doping of large-size ions beyond the equilibrium limit-proposes a new idea for carrier doping and controlling thermal properties to enhance the ZT of polycrystalline SnSe.

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Growth and transport properties of tin monosulphoselenide single crystals

Cited by 18 publications

References 33 publications

Impact of growth temperature on the properties of SnS film prepared by thermal evaporation and its photovoltaic performance

Impact of growth temperature on the properties of SnS film prepared by thermal evaporation and its photovoltaic performance

Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique

Degenerated Hole Doping and Ultra‐Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution

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