Impact of growth temperature on the properties of SnS film prepared by thermal evaporation and its photovoltaic performance

Kawano, Yu; Minemoto, Takashi

doi:10.1016/j.cap.2015.03.026

Cited by 105 publications

(57 citation statements)

References 25 publications

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“…As the substrate temperature is increased from 250 to 350 • C, the grain dimension grows from 10 2 to 10 3 nm. At 350 • C the SnS grains showed a very compact morphology: No more flake-like crystal structures were observed, in accordance to what is reported in [8,53].…”

Section: Substrate Temperaturesupporting

confidence: 90%

“…As the substrate temperature is increased from 250 to 350 °C, the grain dimension grows from 10 2 to 10 3 nm. At 350 °C the SnS grains showed a very compact morphology: No more flake-like crystal structures were observed, in accordance to what is reported in [8,53]. Figure 2 shows the X-ray diffraction (XRD) patterns of the as-deposited SnS film, the crystalline structure was analyzed with a Thermo ARL X'TRA powder diffractometer (in Bragg-Brentano geometry, equipped with a Cu-anode X-ray source (Kα, λ = 1.5418 Å) and a Peltier Si (Li)-cooled solid state detector, (Thermo Fisher, Waltham, MA, USA).…”

Section: Substrate Temperaturesupporting

confidence: 90%

“…We have registered a slightly Sn rich composition (S/Sn ratio fluctuated between 0.9 and 1.01), demonstrating the potentiality of forming stoichiometric SnS just by directly evaporating the SnS compound, in a way similar to CdTe deposition. However, as already proven [8,54], on the basis of these data we cannot exclude the presence of other phases; for this reason we have also introduced Raman analysis. Figure 2 shows the X-ray diffraction (XRD) patterns of the as-deposited SnS film, the crystalline structure was analyzed with a Thermo ARL X'TRA powder diffractometer (in Bragg-Brentano geometry, equipped with a Cu-anode X-ray source (Kα, λ = 1.5418 Å) and a Peltier Si (Li)-cooled solid state detector, (Thermo Fisher, Waltham, MA, USA).…”

Section: Substrate Temperaturementioning

confidence: 99%

Section: Substrate Temperaturementioning

confidence: 99%

“…Schneikart et al [1] reported their best power conversion efficiency η = 1.6% with an optimized substrate temperature of T sub = 250 • C, while Kawano et al [8] In Figure 8 efficiencies normalized to the best one corresponding to solar cells made with SnS deposited at different substrate temperatures are shown. Among the different samples, the best performance is achieved at Tsub = 270 °C for samples made in the first run, as well as in the second run.…”

Section: Efficiencymentioning

confidence: 99%

See 4 more Smart Citations

SnS Thin Film Solar Cells: Perspectives and Limitations

et al. 2017

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Abstract:Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements) are still limiting their market diffusion. For this reason new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe 2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs). The sulfur loss represents one of the major challenges of SnS solar cell technology.

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Section: Substrate Temperaturesupporting

confidence: 90%

Section: Substrate Temperaturesupporting

confidence: 90%

Section: Substrate Temperaturementioning

confidence: 99%

Section: Substrate Temperaturementioning

confidence: 99%

Section: Efficiencymentioning

confidence: 99%

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SnS Thin Film Solar Cells: Perspectives and Limitations

et al. 2017

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Kinetically Controlled Growth of Phase‐Pure SnS Absorbers for Thin Film Solar Cells: Achieving Efficiency Near 3% with Long‐Term Stability Using an SnS/CdS Heterojunction

Lim

Suh

Suryawanshi

et al. 2018

Advanced Energy Materials

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Facile control over the morphology of phase pure tin monosulfide (SnS) thin films, a promising future absorber for thin film solar cells, is enabled by controlling the growth kinetics in vapor transport deposition of congruently evaporated SnS. The pressure during growth is found to be a key factor in modifying the final shape of the SnS grains. The optimized cube‐like SnS shows p‐type with the apparent carrier concentration of ≈1017 cm−3 with an optical bandgap of 1.32 eV. The dense and flat surface morphology of 1 µm thick SnS combined with the minimization of pinholes directly leads to improved diode quality and increased shunt resistance of the SnS/CdS heterojunction (cell area of 0.30 cm2). An open‐circuit voltage of up to 0.3068 V is achieved, which is independently characterized at the Korea Institute of Energy Research (KIER). Detailed high‐resolution transmission electron microscopy analysis confirms the absence of detrimental secondary phases such as Sn2S3 or SnS2 in the SnS grains or at intergrain boundaries. The initial efficiency level of 98.5% is maintained even after six months of storage in air, and the final efficiency of the champion SnS/CdS cell, certified at the KIER, is 2.938% with an open‐circuit voltage of 0.2912 V.

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Broad Spectral Response of Se‐Doped SnS Nanorods Synthesized through Electrodeposition

et al. 2017

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Un-and Se-doped nanostructured SnS thin films were synthesized (deposited) on FTO-coated glass substrates using an electrodeposition method. A study of the crystallinity indicated an orthorhombic phase with a grain size of 54-75 nm. Morphological features of the films showed a well-developed rod structure (less than 100 nm). Optical energy band gaps in the range of 1.26-1.46 eV were estimated for the deposited films. The effect of Se as a dopant on the determination of the optoelectronic and conductivity conversion from p-to n-type nanostructured SnS thin films was investigated. In addition, an n-type Se-SnS film was obtained at lower concentrations of Se. This technique is suggested to control the electrical conductivity of deposited films to be applied in photoswitching-based devices.

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Impact of growth temperature on the properties of SnS film prepared by thermal evaporation and its photovoltaic performance

Cited by 105 publications

References 25 publications

SnS Thin Film Solar Cells: Perspectives and Limitations

SnS Thin Film Solar Cells: Perspectives and Limitations

Kinetically Controlled Growth of Phase‐Pure SnS Absorbers for Thin Film Solar Cells: Achieving Efficiency Near 3% with Long‐Term Stability Using an SnS/CdS Heterojunction

Broad Spectral Response of Se‐Doped SnS Nanorods Synthesized through Electrodeposition

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