Growth behavior on V-grooved high Miller index GaAs substrates by metalorganic chemical vapor deposition

Kim, Moo-Sung; Kim, Yong; Lee, Min-Suk; Park, Young Ju; Kim, Seong-II; Min, Seung-Kee

doi:10.1016/0022-0248(94)00527-3

Cited by 10 publications

(1 citation statement)

References 18 publications

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“…The signal intensity of the TEM transmission image is inversely promotional to the atomic number; therefore, the bright cone shape represents the air voids that are encapsulated by a p-Al 0.45 GaAs regrown layer shown in a light gray color, as indicated in the TEM picture as well as other features. The p-GaAs PC layer retained its steepness from the TEM image, which indicated a minute surface reconstruction induced by the in situ annealing. ,− Here, it is worth noting that the diameter of air holes appeared to be different owing to the sampling for TEM observation since the location of air voids is invisible from the surface of the regrown wafer. The air voids coalesced at the center of the hole shape of around 100 nm over the top surface of the p-GaAs layer for all samples in spite of the surface morphologies.…”

Section: Resultsmentioning

confidence: 93%

Study of an Epitaxial Regrowth Process by MOCVD for Photonic-Crystal Surface-Emitting Lasers

Chen¹,

Hong²,

Huang³

et al. 2021

Crystal Growth & Design

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We study a metal organic chemical vapor deposition regrowth process for electrically driven photonic-crystal surface-emitting lasers (PCSELs). The photonic-crystal (PC) structure consisting of air voids embedded in semiconductor materials is fabricated on the topmost p-GaAs layer of a base-epitaxial wafer followed by the regrowth of a p-Al0.45GaAs layer and a p+-GaAs contact layer, consecutively. The effect of both ex situ and in situ surface treatment before regrowth processes together with the regrowth parameters are investigated. The O2 plasma treatment, one of the ex situ treatment process steps, is found to be critical for the surface condition. A flat surface with retained air voids is obtained with proper surface treatment and epitaxial growth condition, and the electrically pumped PCSELs are successfully demonstrated. Moreover, the optimized regrowth condition is also applicable to various PC topologies to enhance the optical output performance.

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Section: Resultsmentioning

confidence: 93%