Growth defects in GaN films on 6H–SiC substrates

Chien, F. R.; Ning, X. J.; Stemmer, Susanne; Pirouz, P.; Bremser, M. D.; Davis, R. F.

doi:10.1063/1.116279

Cited by 77 publications

(35 citation statements)

References 5 publications

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“…Above this region, the dislocations in sample A gradually decreases with the increase of the crystal growth away from the interface till to the top surface. The reduction is mainly attributed to the strong interaction between the dislocations [7,8]. Contrary to the gradual change in the sample A, an apparent drastic reduction in the dislocation density can be observed in sample B.…”

Section: Methodscontrasting

confidence: 72%

Effect of Al content on the microstructure in GaN grown on Si by MOVPE

Chen

Ishiko

Kuroiwa

et al. 2003

phys. stat. sol. (c)

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PACS 68.37. Lp, 81.05.Ea, 81.15.Gh III-nitride films with different layer structures are grown on Si(111) substrate by metalorganic vapor phase epitaxy. Inserting an Al x Ga 1Àx N (x $ 0:08) layer in the structure can effectively reduce the dislocations in the GaN top film, which is assessed by transmission electron microscopy experiment. Secondary ion mass spectrometry and cathodoluminescence studies demonstrate that the variation of the dislocation density is directly related to the distributions of the Al concentration in the epilayer.

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Section: Methodscontrasting

confidence: 72%

Effect of Al content on the microstructure in GaN grown on Si by MOVPE

Chen

Ishiko

Kuroiwa

et al. 2003

phys. stat. sol. (c)

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“…The image in Figure Although this reaction is energetically neutral, it may occur because of local strain conditions [19]. At a certain point (t in Figure 4 b) the screw dislocation (the segment s) transformed into a nanopipe, which propagates further along the c direction to the surface of the epitaxial layer.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Nanopipes in GaN: photo-etching and TEM study

Lazar

Weyher

Macht

et al. 2004

Eur. Phys. J. Appl. Phys.

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Abstract. Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction contrast techniques that the nanopipes are screw coreless dislocations. An example is shown of the transformation of a normal full-core screw dislocation into a nanopipe. The PEC/TEM experiments indicate the presence of electrically active (recombinative) species in the vicinity of the nanopipes.PACS. 61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

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“…The major defects are threading dislocations and domain boundaries in the epitaxial Wurtzite GaN. Threading dislocations have been experimentally identified mainly to be pure 1/3 1120 edge dislocations, some mixed edge and screw dislocations and a few 0001 pure screw dislocations [1][2][3]. The exact atomic structure of 1/3 1120 edge dislocation has been verified by Z-contrast imaging technique recently [4].…”

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confidence: 98%

A theoretical study on various models for the domain boundaries in epitaxial GaN films

Wang

2000

Applied Physics A: Materials Science & Processing

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Various domain boundaries that are found in epitaxial Wurtzite GaN films were studied by molecular dynamics simulation. The Ewald summation algorithm and Keating potential model are adopted to calculate the longrange Coulomb interaction and the short-range bonding force in the semiconductor system, respectively. The research results show that the domain formation energies of (1100) and (1120) boundaries are significantly different. The latter ones have general quite higher formation energies than the formers. The like-atom (i.e. atoms of the same kind) bonding domain boundaries (LABDB) have higher formation energies than their counterparts of unlike-atom (i.e. atoms of different kinds) bonding domain boundaries (UABDB) in all GaN (1100) and (1120) interfaces. The UABDB structures are all stable while most of the LABDB are unstable. The advantage and the limitation of Keating potential model in Molecular Dynamics simulation for covalent crystal are discussed. PACS: 61.70; 61.16.D; 68.55.LnGallium nitride (GaN) attracts extensive research interests both in science and in industry for it is an important material in the manufacture of photoelectric device, such as blue/green light-emitting diode, laser diode, etc. The successful application of the material may cause revolutionary changes of the human world in illumination and imaging apparatuses. A significant character of GaN is that it can still give high-efficiency luminescence even under a high density of crystal defects. This phenomenon seems in paradox with the common opinion that lattice defects introduce nonradiative recombination centres in III-V semiconductor and the recombination centres reduce the efficiency and lifetime of the photoelectric devices. The puzzle imposes an urgent demand for an in-depth study of the defect structures and their roles in the light-emission process of GaN crystal.

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Growth defects in GaN films on 6H–SiC substrates

Abstract: Twodimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates Appl.

Cited by 77 publications

References 5 publications

Effect of Al content on the microstructure in GaN grown on Si by MOVPE

Effect of Al content on the microstructure in GaN grown on Si by MOVPE

Nanopipes in GaN: photo-etching and TEM study

A theoretical study on various models for the domain boundaries in epitaxial GaN films

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