Growth evolution of Si<sub>x</sub>N<sub>y</sub> on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

Wang, Tzu Yu; Ou, Sin Liang; Horng, Ray Hua

doi:10.1039/c3ce42638f

Cited by 16 publications

(16 citation statements)

References 40 publications

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“…These results indicated that the SLs can effectively assist in the elimination of dislocations. The screw and edge dislocation densities (D screw and D edge ) can be derived from the following equations: D screw = β (002) /9b 2 screw and D edge = β (102) /9b 2 edge 16 . In these two equations, β (002) and β (102) represent the FWHM values of AlN(0002) and AlN(10ī2), respectively.…”

Section: Resultsmentioning

confidence: 99%

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

Wang

Tasi

Lin

et al. 2017

Sci Rep

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In this study, high internal-quantum-efficiency (IQE) AlGaN multiple quantum wells (MQWs) were successfully demonstrated on low-defect-density AlN templates with nano-patterned sapphire substrates. These templates consisted of AlN structures with 0∼30 periods superlattices (SLs) by alternating high (100) and low (25) V/III ratios under a low growth temperature (1130 °C). Compared to conventional high crystal-quality AlN epilayers achieved at temperatures ≥1300 °C, lower thermal budget can reduce the production cost and wafer warpage. Via optimization of the SL period, the AlN crystallinity was systematically improved. Strong dependence of SL period number on the X-ray full-width-at-half-maximum (FWHM) of the AlN epilayer was observed. The AlN template with 20-period SLs exhibited the lowest FWHM values for (0002) and (10ī2), namely 331 and 652 arcsec, respectively, as well as an ultra-low etching pit density of 1 × 105 cm−2. The relative IQE of 280 nm AlGaN MQWs exhibited a dramatically increase from 22.8% to 85% when the inserted SL increased from 0 to 20 periods. It has hardly ever been reported for the AlGaN MQW sample. The results indicate that the engineered AlN templates have high potential applications in deep ultraviolet light emitters.

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Section: Resultsmentioning

confidence: 99%

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

Wang

Tasi

Lin

et al. 2017

Sci Rep

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“…[12][13][14] Recently, we have demonstrated high-quality In 0.3 Ga 0.7 As epitaxial layers on a 2 nm amorphous In 0.6 Ga 0.4 As buffer layer on GaAs substrate by means of low-temperature molecular beam epitaxy (LT-MBE). 15 An amorphous In 0.6 Ga 0.4 As insert layer can be utilized as an elastic layer between the In 0.3 Ga 0.7 As epilayer and the GaAs substrate.…”

Section: Introductionsmentioning

confidence: 99%

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Gao

Lei

et al. 2014

CrystEngComm

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The effects of the thickness of the large-mismatched amorphous In 0.6 Ga 0.4 As buffer layer on In 0.3 Ga 0.7 As epi-films grown on a GaAs substrate have been systematically investigated. The In 0.3 Ga 0.7 As films with the In 0.6 Ga 0.4 As buffer layer of 0, 1, 2, and 4 nm thickness are grown by low-temperature molecular beam epitaxy (LT-MBE) and are characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the degree of relaxation and the crystallinity of the as-grown In 0.3 Ga 0.7 As films are strongly affected by the thickness of the amorphous In 0.6 Ga 0.4 As buffer layer. The thinner In 0.6 Ga 0.4 As buffer layer is not enough to efficiently release the misfit strain between the In 0.3 Ga 0.7 As epilayer and the GaAs substrate, while the thicker In 0.6 Ga 0.4 As buffer layer is unfavorable to trap the dislocations and prevent them from extending into the In 0.3 Ga 0.7 As epi-films. We have demonstrated that the amorphous In 0.6 Ga 0.4 As buffer layer with a thickness of 2 nm can advantageously prevent threading and misfit dislocations from propagating into the subsequent In 0.3 Ga 0.7 As epilayer and increase the degree of relaxation of the as-grown In 0.3 Ga 0.7 As, ultimately leading to a high-quality In 0.3 Ga 0.7 As film. Our novel buffer layer technology has triggered a simple but effective approach to grow high-crystallinity In 0.3 Ga 0.7 As epitaxial film and is favorable for fabrication of GaAs-based high-efficiency four-junction solar cells.

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“…These are vital for improving the performance of devices on Si. To date, high-quality group III-nitride thin films have been achieved on Si substrates by PLD [147,[154][155][156][157][158][159][160][161][162][163][164]. (111) substrates at various temperatures ranging from 300 to 750 1C [165].…”

Section: Group Iii-nitride Films On Cu Substrates By Pldmentioning

confidence: 99%

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Wang

Yang

et al. 2015

Surface Science Reports

130

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Growth evolution of Si_xN_y on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

Abstract: We verified that nanocrystalline SixNy with a size ranging from 4 to 6 nm appeared on the pit sidewall and preferred to reside at the pit.

Cited by 16 publications

References 40 publications

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

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Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

Abstract: We verified that nanocrystalline SixNy with a size ranging from 4 to 6 nm appeared on the pit sidewall and preferred to reside at the pit.

Cited by 16 publications

References 40 publications

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

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Growth evolution of Si_xN_y on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy