Growth-induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

Abstract

We report a study of a defect responsible for the ‘‘g’’ bound exciton line at 1.5112 eV that is frequently detected in photoluminescence spectra of GaAs grown by molecular beam epitaxy (MBE). A direct correlation has been observed between this line and a transition at 1.4946 eV, which is shown to result from a conduction band-to-acceptor recombination involving a shallow, unidentified acceptorlike defect that is labeled ‘‘A.’’ The activation energy of the defect is 24.8±0.2 meV, about 1.7 meV lower than that of CAs acceptor. Upon hydrogenation the defect is passivated more extensively than any known shallow acceptor species in GaAs. This result is analyzed in terms of a passivation model, from which it can be inferred that the A defect is not due to a simple substitutional Group II impurity on a Ga site. Incorporation of the A defect strongly affects the luminescence properties of the material. An almost complete quenching of the donor-bound exciton lines, profound changes in the line shape and relative intensity of the free exciton recombination, and appearance of a sharp transition of unknown origin at 1.5138 eV were observed with increasing defect concentration. Apparently ‘‘donorless’’ low temperature exciton recombination spectra are reported for defect-rich p-type MBE GaAs layers with donor concentrations as high as 7×1014 cm−3 and compensation ratios of ∼0.3. The dependence of the defect incorporation on MBE growth parameters is discussed. The feasibility of MBE growth of high purity, nearly shallow defect-free p-type GaAs layers at marginally As-stabilized surface conditions over an about 1–5 μm/h range of deposition rates is demonstrated.

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

“…A low emission observed around 1.450 eV is linked to the two longitudinal optical phonon replicas (order 1) of (D 0 -A 0 ) and (e-A 0 ) transitions [50]. The emission centred at 1.513 eV mainly corresponds to neutral donors to valence band (D 0 -h), ionized donors to exciton transitions can also be detected close to this energy [49].…”

“…4. Same transitions are detected for all these samples; two dominant peaks are observed at 1.490 and 1.495 eV corresponding to both the transitions between neutral donor and neutral acceptor (D 0 -A 0 ) and that for band conduction and neutral acceptor (e-A 0 ) respectively [47][48][49][50]. A low emission observed around 1.450 eV is linked to the two longitudinal optical phonon replicas (order 1) of (D 0 -A 0 ) and (e-A 0 ) transitions [50].…”

Photoluminescence studies of hydrogenated GaAlAs grown by metalorganic vapor phase epitaxy

“…[7][8][9] Wicks et al 7 have suggested that the origin of this defect is a group III vacancy which gets readily incorporated in GaAlAs layers. Szaferanek et al 10 have ruled out the possibility of a substitutional group II impurity to be the origin of this PL peak and have also observed that the presence of this peak quenches the acceptor bound exciton luminescence in GaAs layers. At a lower value of incident laser intensity, the PL intensity of the defect bound exciton peak at 1.825 eV is higher than that of the bound exciton peak at 1.845 eV.…”