Growth kinetics of induced domains in Ba0.8Sr0.2TiO3 ferroelectric thin films

Киселев, Д. А.; Afanasiev, M. S.; Levashov, S. A.; Чучева, Г. В.

doi:10.1134/s1063783415060189

Cited by 12 publications

(6 citation statements)

References 8 publications

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“…Small remark, we removed offset for all VPFM images for better image clarity. However, our recent experimental results on piezoelectric response of BST 80/20 films [4] indicate that the BST film have selfpolarization effect, in the current paper this effect not discussed. Increasing a value of the remnant piezoresponse with the thickness of the BST film confirm result observe eff zz d for these films (Fig.…”

Section: Resultsmentioning

confidence: 66%

“…Along with this, the discuss prospects of using ferroelectric materials in storage systems and elements microwave technology [1][2][3]. Ferroelectric barium strontium titanate (BST) thin films have been widely investigated as potential materials for the applications of microelectronic devices such as nonvolatile random access memories, infrared detectors, and microwave devices [4,5,6]. For these new applications, methods were developed and/or refined for depositing thin BST film by industry-standard and highthroughput techniques such as RF sputtering and Metalorganic Chemical Vapor deposition (MOCVD), and the electrical properties of the thin-films proved to be significantly different than bulk ceramics of the similar composition [7].…”

Section: Introductionmentioning

confidence: 99%

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Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba0.8Sr0.2TiO3 Thin Films

Kiselev¹,

Levashov²,

Afanasiev³

et al. 2016

J. Nano- Electron. Phys.

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The thickness dependent of electrical and piezoelectric properties of lead-free ferroelectric Ba0.8Sr0.2TiO3 thin films is reported. Ba0.8Sr0.2TiO3 (BST 80/20) thin films for various thickness, ranging from 150 nm to 550 nm, were prepared by high-frequency reactive sputtering of a ceramic target in an oxygen atmosphere on p-type Si substrate. Memory windows and effective dielectric constant of the BST film in Au/BST/Si thin film capacitors is found to increase with the increasing thickness of the film. Domain structure, domain switching and hysteresis loops of the BST 80/20 thin film were investigate via the piezoresponse force microscopy. Complete domain switching and strong piezoresponse are found in the ferroelectric BST film. The piezoelectric coefficient ( eff zz d ) and the remnant piezoelectric response (ΔPR) of BST 80/20 films is found to increase with the thickness of the film.

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Section: Resultsmentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba0.8Sr0.2TiO3 Thin Films

Kiselev¹,

Levashov²,

Afanasiev³

et al. 2016

J. Nano- Electron. Phys.

Self Cite

View full text Add to dashboard Cite

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“…A ferroelectric film with thickness h = 120 nm was deposited by HF sputtering of a polycrystalline target in oxygen atmosphere in a Plazma-50SE (Russia) setup. The design of this setup and the film deposition technique were discussed in greater detail in [7,8]. Impedance measurements were carried out in the paraelectric phase in the 110−130 • C temperature range at the same frequency (1 MHz) as in [6] using an Agilent E4980A precision LCR meter, a portable computer with updated software, and a specialized camera fitted with a warm table with thermal stabilization.…”

Section: Highmentioning

confidence: 99%

A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba-=SUB=-x-=/SUB=-Sr-=SUB=-1-x-=/SUB=-TiO-=SUB=-3-=/SUB=-

Goldman

Чучева

2022

Physics of the Solid State

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High-frequency measurements of the capacitance and conductivity of Ni-Ba0.8Sr0.2TiO_3-Pt and Ni-Ba0.8Sr0.2TiO_3-Si objects with a ferroelectric thickness of 120 nm in the paraelectric phase were carried out. It is shown that in the entire range of external voltages, the electric field practically does not penetrate Si. The conclusion made earlier about the reasons for the weak manifestation of the field effect is confirmed --- the polarization of the ferroelectric layer is almost completely shielded by the charges of electronic traps at the Ba0.8Sr0.2TiO_3-Si contact. It is noted that a sharp decrease due to passivation of the activity of surface traps will allow implementing transistors based on metal-BST-Si structures with a working surface channel of non-basic charge carriers and will ensure the construction of high-quality FeRAM non-volatile memory cells. Keywords: metal-dielectric-semiconductor-structures, metal-dielectric-metal-structures, ferroelectric films of the composition Ba0.8Sr0.2TiO3, high-frequency impedance.

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“…A h = 50 nm thick ferroelectric film was deposited by the polycrystalline target HF sputtering in oxygen atmosphere using Plazma-50SE system (Russia). For more details of the system design and the film deposition technique,see [3,4]. Impedance measurements were carried out in the range from room temperature to 121 • C at 1 MHz using LCR Agilent E4980A precision meter, a laptop with updated software, and a special camera furnished with a heating table with thermal stabilization.…”

Section: Influence Of Stressesmentioning

confidence: 99%

The Effect Of A Strong Static Electric Field And Heating On Characteristics Of The High-Frequency Impedance Of Metal--Ferroelectric--Semiconductor Structures

D.A.

E.I.

G.V.

2022

Physics of the Solid State

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Studies have been carried out on the effect of heating and a strong field, but pre-breakdown, effects on high-frequency characteristics of the impedance of heteroepitaxial structures Ni-Ba0.8Sr0.2TiO3-pSi with a ferroelectric thickness of 50 nm. It was shown, that regardless of the polarity of the field stress, characteristics shifted towards a positive bias, and the width of hysteresis loops decreased; plateau levels remained virtually unchanged. Heating up to 121oC led to a change in levels of the upper plateau of characteristics: for the capacity it decreased, and for the conductivity it increased; branches on the loop not only narrowed and shifted, but changed places in comparison with the original dependence (loop reverse). These results can be explained: under the field action, by the generation of additional electronic states, localized in the buffer layer at the Si-Ba1-xSrxTiO3 interface, and by heating, by the appearance of delay effects due to the development of fluctuation processes, underlying the smearing of the phase transition from ferroelectric to paraelectric condition. Keywords: High-frequency field characteristics of the impedance, the field stress, hysteresis loops, the generation of additional localized electronic states, delay effects, fluctuation processes, smearing of the phase transition.

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Growth kinetics of induced domains in Ba0.8Sr0.2TiO3 ferroelectric thin films

Cited by 12 publications

References 8 publications

Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba0.8Sr0.2TiO3 Thin Films

Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba0.8Sr0.2TiO3 Thin Films

A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba-=SUB=-x-=/SUB=-Sr-=SUB=-1-x-=/SUB=-TiO-=SUB=-3-=/SUB=-

The Effect Of A Strong Static Electric Field And Heating On Characteristics Of The High-Frequency Impedance Of Metal--Ferroelectric--Semiconductor Structures

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