Growth kinetics of LPE Ga0.83Al0.17Sb layers grown from supercooled solutions

Mébarki, M.; Salsac, P.; Joullié, A.; Bougnot, G.

doi:10.1016/0022-0248(83)90192-6

Journal of Crystal Growth

1983

DOI: 10.1016/0022-0248(83)90192-6

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Growth kinetics of LPE Ga0.83Al0.17Sb layers grown from supercooled solutions

M. Mébarki

P. Salsac

A. Joullié

et al.

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Cited by 8 publications

References 12 publications

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Determination of the band discontinuities of GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction by capacitance–voltage measurements

Mébarki¹

1989

Phys. Stat. Sol. (a)

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Experimental results obtained by capacitance‐voltage measurements for an LPE grown GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction are described. They permit the extraction of the discontinuities in the bands ΔEc = 0.14 eV and ΔEv = 0.10 eV. The resulting relation ΔEc = 0.62 ΔEg is different from Dingle's rule but in agreement with other works. Also Ga1−xAlxSb electron affinity (for x = 0.17) is deduced to 3.92 eV.

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Determination of the band discontinuities of GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction by capacitance–voltage measurements

Mébarki¹

1989

Phys. Stat. Sol. (a)

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Liquid phase epitaxial Ga0.96Al0.04Sb p/n junctions

Pérotin

Gouskov

Luquet

et al. 1989

Journal of Crystal Growth

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Effect of composition and growth conditions on the properties of AlxGa1-xSb epilayers

Chen

Juang

1989

Solid-State Electronics

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Growth kinetics of LPE Ga0.83Al0.17Sb layers grown from supercooled solutions

Cited by 8 publications

References 12 publications

Determination of the band discontinuities of GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction by capacitance–voltage measurements

Determination of the band discontinuities of GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction by capacitance–voltage measurements

Liquid phase epitaxial Ga0.96Al0.04Sb p/n junctions

Effect of composition and growth conditions on the properties of AlxGa1-xSb epilayers

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