Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film

Jia, Yanqing; Wu, Haidi; Zhao, Jiang‐Lin; Guo, Haibin; Zeng, Yu‐Jia; Wang, Ding; Zhang, Chi; Zhang, Yachao; Ning, Jing; Zhang, Jincheng; Zhang, Tao; Wang, Dong

doi:10.1039/d1ce00988e

Cited by 11 publications

(8 citation statements)

References 28 publications

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“…A few studies on transferring AlN thin films to flexible adhesive substrates have been reported recently. [54][55][56] However, there exist three issues: 1) the AlN crystalline quality, e.g., grain size, crystal orientation, in the above-mentioned studies is rather low due to the growing methods, which are limited by the growth approaches; 2) the adhesive handling materials during the transfer can leave residues on the AlN film; 3) only adhesive flexible substrates have been demonstrated as the final host substrate, which eliminate the potential of applications such as AlN-based vertical devices. [4] Hence, it is desirable to overcome the above issues and achieve a high-quality transferrable singlecrystalline AlN NM that can be transferred to a broader range of substrates.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Gong

Jie

Wang

et al. 2023

Adv Elect Materials

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Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great attention over the last decade, which poses great advantages to complex device integration. Applications in heterogeneous electronics and flexible electronics have been demonstrated with various semiconductor nanomembranes. Single‐crystalline aluminum nitride (AlN), as an ultrawide‐bandgap semiconductor with great potential in applications such as high‐power electronics has not been demonstrated in its NM forms. This very first report demonstrates the creation, transfer‐printing, and characteristics of the high‐quality single‐crystalline AlN NMs. This work successfully transfers the AlN NMs onto various foreign substrates. The crystalline quality of the NMs has been characterized by a broad range of techniques before and after the transfer‐printing and no degradation in crystal quality has been observed. Interestingly, a partial relaxation of the tensile stress has been observed when comparing the original as‐grown AlN epi and the transferred AlN NMs. In addition, the transferred AlN NMs exhibits the presence of piezoelectricity at the nanoscale, as confirmed by piezoelectric force microscopy. This work also comments on the advantages and the challenges of the approach. Potentially, the novel approach opens a viable path for the development of the AlN‐based heterogeneous integration and future novel electronics and optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Gong

Jie

Wang

et al. 2023

Adv Elect Materials

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“…Recently, some two-dimensional (2D) materials have been applied in the growth of GaN and other materials. − That is, van der Waal epitaxy (vdWE) based on 2D materials. Among the common 2D materials, graphene is a better choice due to its excellent stability, in-plane hexagonal lattice arrangement, and the more mature preparation technology.…”

Section: Introductionmentioning

confidence: 99%

Remote Epitaxy and Exfoliation of GaN via Graphene

Han

et al. 2022

ACS Appl. Electron. Mater.

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The remote epitaxy of GaN via graphene has attracted much attention due to the potential of easy mechanical exfoliation, and the exfoliated layers can be transferred onto foreign substrates according to the application needs, which is beneficial to improve the performance of GaN-based devices. In this work, a GaN epi-layer was grown by metal–organic chemical vapor deposition on the monolayer-graphene-coated AlN/sapphire or GaN substrates. The influence of growth temperature, carrier gas, and substrate on the exfoliation of the GaN epi-layer was studied. When the growth temperature is no more than 800 °C and N2 is used as the carrier gas, the monolayer graphene can be retained on the AlN/sapphire substrate during the growth process. Thus, the GaN epi-layer can be exfoliated successfully. However, the monolayer graphene will be destroyed under a growth temperature of 850 °C, and lead to the failure of exfoliation. Besides, the monolayer graphene can also be damaged when the H2 carrier gas or GaN substrate is employed with a growth temperature of 800 °C. This causes the GaN epi-layer to be exfoliated not as well. The experimental results illustrate that suitable growth conditions and substrate are important for realizing the exfoliation of a GaN epi-layer.

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“…Consequently, they prepared a large‐area and flexible AlN film with minimal damage. [ 81 ] The MLG layers (0.5 nm) were first grown on a Cu foil via CVD and transferred to the two‐inch sapphire substrate. As the growth time of AlN increased, the growth processes of the AlN film exhibited four stages: I) diffusion‐dominated stage; II) combined‐effect stage; III) adsorption‐dominated stage; IV) decomposition‐dominated stage.…”

Section: Iii‐nitride Epitaxy Based On 2d Materialsmentioning

confidence: 99%

“…Raman mapping of d) AlN (657 cm −1), e) graphene (2690 cm −1 ), and f) sapphire (417 cm −1 ) on the sample after peeling. Reproduced with permission [81]. Copyright 2021, Royal Society of Chemistry.…”

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confidence: 99%

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

Song

Chen

Yang

et al. 2023

Adv Funct Materials

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Figure 1. An illustration shows the outline of this review article covering flexible nitride devices and exfoliation techniques based on 2D material implementations. The 2D material-based exfoliation methods are mainly divided into: a) thermal release tape-supported delamination method; ((a1) Reproduced with permission. [37] Copyright 2019, Wiley-VCH. (a2) Reproduced under terms of the CC-BY license. [25] Copyright 2020, The Authors, published by American Association for the Advancement of Science. (a3) Reproduced with permission. [38] Copyright 2021, American Chemical Society.) b) chemical release by etching of a sacrificial layer; ((b1) Reproduced with permission. [39] Copyright 2011, Wiley-VCH. (b2) Reproduced with permission. [40] Copyright 2013, American Institute of Physics. (b3) Reproduced under terms of the CC-BY license. [41] Copyright 2014, The Authors, published by American Institute of Physics.) c) mechanical spalling using the stressor layer; ((c1) Reproduced with permission. [26a] Copyright 2014, Springer Nature. (c2) Reproduced with permission. [42] Copyright 2021, American Chemical Society.) d) the transfer of the epitaxial layer by self-separation. ((d1) Reproduced with permission. [43] Copyright 2020, Elsevier. (d2) Reproduced with permission. [44]

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Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film

Abstract: We report a novel diffusion–adsorption regulation growth method in the epitaxy of AlN on graphene for the high-quality and transferable large-size AlN film.

Cited by 11 publications

References 28 publications

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

Remote Epitaxy and Exfoliation of GaN via Graphene

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

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