Growth-mode-specific intrinsic stress of thin silver films

Koch, R.; Winau, D.; Fuhrmann, André; Rieder, K. H.

doi:10.1103/physrevb.44.3369

Cited by 44 publications

(22 citation statements)

References 22 publications

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“…Extensive in situ thin film stress state studies [7][8][9][10][11][12][13][14] have been performed during the deposition of various single elemental films. It has been revealed that high adatom mobility films like Cu 10,12 and Ag 7-10 usually undergo compressiveto-tensile-to-compressive stress evolution corresponding to the nucleation of islands, coalescence of islands, and postgrowth stages.…”

Section: Introductionmentioning

confidence: 99%

Compositional dependent thin film stress states

Thompson

2010

Journal of Applied Physics

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Articles you may be interested inStructure-stress-resistivity relationship in WTi alloy ultra-thin and thin films prepared by magnetron sputtering J. Appl. Phys. 113, 213504 (2013); 10.1063/1.4808240 Effect of adatom surface diffusivity on microstructure and intrinsic stress evolutions during Ag film growth J. Appl. Phys. 112, 043503 (2012); 10.1063/1.4746739 Kinetic model for dependence of thin film stress on growth rate, temperature, and microstructure J. Appl. Phys. 111, 083520 (2012); 10.1063/1.4704683Effect of initial stress/strain state on order-disorder transformation of FePt thin films This paper addresses in situ stress evolution of two-component Fe x Pt 1−x , where x spanned 0 to 1, alloy thin films. The stresses of the high-temperature, quenched-in, solid solution phase was determined by in situ wafer curvature measurements during ambient temperature growth. The measured stresses were shown to be compositional dependent and spanned both compressive and tensile stress states. Under specific growth conditions, a "zero-stress" state could be achieved. The alloy stress states did not show any significant stress recovery upon ceasing the deposition, i.e. the stress state during growth was retained in the film. X-ray diffraction, transmission electron microscopy, and atom probe tomography were used to characterize the microstructures of each thin film. The evolution of the stress state with composition is described in terms of a chemical potential term for preferential segregation of one species in the alloy to the grain boundaries.

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Section: Introductionmentioning

confidence: 99%

Compositional dependent thin film stress states

Thompson

2010

Journal of Applied Physics

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“…If the stress develops on or just below the advancing surface of the film, and if the stress in the film bulk does not change with time, the force per unit width as a function of film thickness is unambiguously defined:" f'(tf) = (4) The growth stress at thickness tf is then directly obtained by differentiating the measured force P( tf) :…”

Section: Origin and Determination Of Growth Stresses In Thin Filmmentioning

confidence: 99%

“…It was shown that the defect (trap) density in SiO, as well as the rate of generation of Si-SiO, interface states upon electron injection increases with the force per unit width of the metal (TiSi,) in a metal-oxide-silicon field effect transistor.3 Moreover, very high film stress changes the dimensions of the Si wafer causing lithographic alignment difficulties due to lateral strain, and depth of focus problems due to curvature of the wafers. 4 The role of stress gradients, arising at the geometrical edges of structures, becomes more important as the dimensions of the structures decrease. Filmedge induced stresses interact with and generate dislocations in the Si( 100) substrate.…”

Section: Introductionmentioning

confidence: 99%

The evolution of growth stresses in chemical vapor deposited tungsten films studied by in situ wafer curvature measurements

Leusink

Oosterlaken

Janssen

et al. 1993

Journal of Applied Physics

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An in situ study of the evolution of the biaxial state of intrinsic stress during nucleation and growth of polycrystalline tungsten chemical vapor deposition films deposited by the hydrogen reduction of tungsten hexafluoride is presented. The evolution of biaxial stress was determined from in situ wafer curvature measurements. It is shown that the intrinsic stress is a growth stress, i.e., a stress developing in close vicinity to the advancing surface of the film due to metastable film growth processes. The stress developing depends strongly on the thickness of the film. High tensile stress (≊4 GPa) is observed during the initial stage of growth, compressive stress (up to −1 GPa) is observed in an intermediate thickness regime after film closure and tensile stress (0.1–1 GPa) is observed in the thick film regime. The associated stress gradients in the film are preserved during and after growth. The development of growth stress is determined by deposition temperature and growth rate. The tensile stress in the thick film regime is larger at a higher growth rate or a lower deposition temperature, while the compressive stress in the intermediate thickness regime showed the opposite dependency. Film properties as the evolution of grain size, impurity content, and resistivity are found not to vary significantly with the growth conditions. Therefore, the development of growth stress is ascribed to kinetical processes. The development of tensile stress in the thick film regime is described with a (kinetic) grain boundary formation and relaxation model. The compressive stress in the intermediate thickness regime is tentatively ascribed to compressive coherency strains induced by interfacial tensions of the grains in the stage of island growth.

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“…The origin of these stresses is intrinsic in nature and can be modulated controllably by choosing appropriate deposition conditions. 6,7 Our approach has the advantage of not needing additional processing or lithography steps and the stress in the gate dielectric layer can be manipulated by altering the deposition conditions or techniques. Another important and unique advantage of this approach that the authors would like to point out is that it can be combined with other strategies presently used to alter the strain state in the channel.…”

Section: Effect Of Intrinsic Stress From a Nanoscale High-dielectric mentioning

confidence: 99%

Effect of intrinsic stress from a nanoscale high-dielectric constant gate oxide on strain in a transistor channel

Wang

Ramanathan

2007

Applied Physics Letters

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The author propose using a nanoscale gate dielectric directly as stressor to alter the strain field in a transistor channel. Using experimentally determined intrinsic stress generated from a gate dielectric, they analyze the strain field in a channel by finite element methods simulation. Analysis shows that the gate dielectric induced strain can be as large as 0.2% corresponding to ∼25% hole mobility enhancement. The results predict that performance improvement in semiconductor devices can be achieved by choosing proper dielectric film deposition conditions and optimizing geometric dimensions. The approach is compatible with other methods presently utilized for generating local strains as well as high-mobility semiconductor channel layers.

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Growth-mode-specific intrinsic stress of thin silver films

Cited by 44 publications

References 22 publications

Compositional dependent thin film stress states

Compositional dependent thin film stress states

The evolution of growth stresses in chemical vapor deposited tungsten films studied by in situ wafer curvature measurements

Effect of intrinsic stress from a nanoscale high-dielectric constant gate oxide on strain in a transistor channel

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