Growth observations of SiGe/Si islands by means of in-situ x-ray diffraction

Deiter, S.; Eisenschmidt, C.; Teubner, T.; Schadow, G.; Jendritzki, U.; Gerlitzke, Anne; Syrowatka, Frank; Heyroth, Frank; Boeck, T.; Hanke, M.

doi:10.1557/proc-1146-nn10-08

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2008

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“…The experimental setup for the in situ X-ray investigations and first results of measurement are reported [13]. …”

Section: Resultsmentioning

confidence: 99%

Liquid phase epitaxy set‐up designed for in situ X‐ray study of SiGe island growth on (001) Si substrates

Teubner¹,

Jendritzki

Böttcher

et al. 2008

Cryst. Res. Technol.

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In situ X-ray examination at a synchrotron beamline of the solution growth of self-assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assembly up to 600 °C. The temperature field and the gas flow in the furnace have been numerically modeled. In this way a meaningful estimate about the power consumption and the thermal gradient across the sample has been reached. Despite its low heat capacity and, thus, fast heating and cooling ability the furnace can be stabilized to ± 0.1 K by a highperformance temperature controller. The growth assembly has been prepared within three separate stages carried out in conventional slideboat liquid phase epitaxy equipment. Such growth assembly allows carrying out then intended experiments without H 2 as normally used in liquid phase epitaxy in favor of N 2 , meeting the demand of minimized risks at beamlines. The equipment ensures an easy handling of the growth assembly.

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“…The experimental setup for the in situ X-ray investigations and first results of measurement are reported [13]. …”

Section: Resultsmentioning

confidence: 99%