Growth of 2<i>H</i>-SiC on 6<i>H</i>-SiC by pulsed laser ablation

Stan, M. A.; Patton, Martin O.; Warner, John Harley; Yang, Jinwei

doi:10.1063/1.111486

Cited by 29 publications

(19 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although there were many reports on the synthesis of the 3C-, 4H-and 6H-SiC polytypes, relatively few dealt with the synthesis of 2H-SiC [7][8][9][10]. This is because, the free energy between different polytypes is so small that the 2H-SiC is easily transformed to other polytypes of SiC and thus difficult to form [11].…”

Section: Introductionmentioning

confidence: 93%

Direct synthesis of 2H–SiC nanowhiskers

Yao

Lee

2003

Chemical Physics Letters

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 93%

Direct synthesis of 2H–SiC nanowhiskers

Yao

Lee

2003

Chemical Physics Letters

View full text Add to dashboard Cite

“…However, SiC quantum dots obtained by etching hexagonal SiC (6H-SiC) have yielded contradictory results on quantum confinement effects [11,12]. The observation of the quantum effects makes SiC nanostructures an even more interesting system because it suggests a possibility of designing SiC based materials with blue or higher frequency emission, e.g., UV.A wurtzite type SiC nanorod with an average diameter of 20 nm and a length of 100 nm has been obtained by pulsed laser ablation on 6H-SiC near 1200 °C [13]. Based on the known stability of the unreconstructed (1010) surface of the wurtzite structure [14], one expects that wurtzite type SiC nanorods (W-SiCNRs) or nanowires (W-SiCNWs) might show remarkable stability.…”

mentioning

confidence: 98%

Electronic and mechanical properties of wurtzite type SiC nanowires

Durandurdu

2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

One-dimensional nanomaterials have attracted considerable attention due to their potential use in nanotechnology. To date various types of nanostructures have been synthesized by a number of experimental techniques. Silicon carbide (SiC) based nanoscale materials are currently attracting great interest since SiC is a promising material for next generation of electronic devices. SiC is expected to have some advantages over silicon based nanostructures because of its outstanding physical properties, such as excellent chemical stability, a wide band gap, high stiffness, high hardness, high thermal conductivity and a high melting point.Recent experiments have revealed a variety of SiC based nanoscale materials. Sun et al. have produced SiC nanotubes and nanowires with various shapes and structures through the reaction of silicon with multiwalled carbon nanotubes at different temperatures [1]. SiC nanowires with 10 to 30 nm diameters have been grown by chemical vapor deposition technique [2,3]. Using an iron particle as a catalyzer, Zhou et al. [4] manage to reduce the SiC wire size to 5 nm. SiC nanowires also have been synthesized by arcdischarge [5,6] and by direct chemical reaction [7]. However, little is known about the atomic structures and physical properties of these SiC nanowires. Recently, Rurali [8] has shown that a pure SiC nanowire grown along the [100] direction with a bulk zinc-blende core is metallic due to the presence of surface states, but hydrogen terminated wires exhibit quantum confinement effect, i.e., a broadening of band gap energy. Quantum confinement effect has also been demonstrated in other nanoscale SiC systems [9,10]. However, SiC quantum dots obtained by etching hexagonal SiC (6H-SiC) have yielded contradictory results on quantum confinement effects [11,12]. The observation of the quantum effects makes SiC nanostructures an even more interesting system because it suggests a possibility of designing SiC based materials with blue or higher frequency emission, e.g., UV.A wurtzite type SiC nanorod with an average diameter of 20 nm and a length of 100 nm has been obtained by pulsed laser ablation on 6H-SiC near 1200 °C [13]. Based on the known stability of the unreconstructed (1010) surface of the wurtzite structure [14], one expects that wurtzite type SiC nanorods (W-SiCNRs) or nanowires (W-SiCNWs) might show remarkable stability. However, a detailed understanding of the structure of thin W-SiCNRs and W-SiCNWs and of their electronic and mechanical properties is required for their future developments and applications in nanotechnology. In this Letter, we carry out ab initio calculations to explore the one-dimensional behavior of pure and hydrogen passivated SiC nanowires grown along [0001] direction of the wurtzite structure. Such an investigation is also helpful in understanding the stability and physical properties of other hexagonal-type (4H and 6H) SiC nanowires/nanorods.The calculations were performed with the SIESTA code [15], which implements density functional theory (DFT) with the p...

show abstract

“…A thick 2H-SiC was grown on 4H-SiC by vapor-liquid-solid process in Si-Li solution, [5] and a thin 2H-SiC was grown on 6H-SiC by pulsed laser ablation. [6] However, the growth is laboring under the high cost and small size of 6H or 4H-SiC substrates. Kusumori et al have also reported 2H-SiC grown on sapphire of an area of 5 × 10 mm 2 by pulsed-laser deposition (PLD).…”

Section: Introductionmentioning

confidence: 99%