Growth of 3C-SiC on Si by Low Temperature CVD

Improvment crystallinity of SiC films by addition of CF4 in HFCVD

“…Low-temperature growth of 3C-SiC films on Si may thus be desirable from an application point of view. However, as the deposition temperature falls, the crystallinity of films will decrease [6]. In this study, 3C-SiC films were deposited by HFCVD using CH 4 , SiH 4 and H 2 at low substrate temperature of 480 C. In the deposition, different flux of CF 4 was introduced into the reactant mixtures as an activating agent.…”

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

“…[5] To date, WZ SiC films can be homoepitaxially grown on commercial available wafers at a temperature higher than 1630 K, [6,7] while ZB SiC films can be relatively easily heteroepitaxially grown on Si wafers in a wide range from 1250 K to 1600 K. [8] ZB monocrystalline hetero-growth on Si substrate has been deeply investigated for decades. [9][10][11][12] Various studies have been carried out to improve the monocrystalline quality, [9] reduce the growth temperature, [10,11] and increase the wafer sizes. [12] In these respects considerable progress has been achieved.…”

Surface Roughness Control of 3C-SiC Films during the Epitaxial Growth Process

“…Besides being an additional time-consuming step in a fabrication sequence, CMP is particularly challenging when applied to ultrathin SiC films because the risks of excessive material removal and creation of deeply penetrating polishing-induced defects in the ultrathin layers are high. As an alternative to CMP, several research groups have explored methods to control the surface roughness during the epitaxial growth process by decreasing the substrate temperature during the carbonization and the film growth steps, 11 as well as including small amounts of silane (SiH 4 ) during the carbonization process. 12 These approaches can be risky because decreasing the growth temperature and changing the stoichiometric gas mixture can push the film growth processes toward the threshold between epitaxial and polycrystalline growth.…”