Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities

Berger, Christoph; Dadgar, A.; Bläsing, J.; Franke, Alexander; Hempel, T.; Goldhahn, R.; Christen, J.; Krost, A.

doi:10.1002/pssc.201100132

Cited by 11 publications

(5 citation statements)

References 12 publications

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“…Group III-nitride semiconductor ternary alloys pose a significant potential for contemporary optoelectronic applications in light emitting diodes (LEDs), laser diodes (LDs), photonic devices, high efficiency solar cells, and Bragg mirrors [1][2][3][4][5]. The demonstrated technology is attainable through a tunable direct bandgap ranging from near infrared (InN ~0.64e V) to ultraviolet (AlN ~6.2 eV) [6].…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

et al. 2013

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Section: Introductionmentioning

confidence: 99%

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

et al. 2013

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“…Moreover, the poor thermal conductivity of dielectric DBRs deters the dissipation of heat generated during lasing operation. To overcome limitations, epitaxially grown UV-nitride DBRs have been developed using lattice-mismatched material [(Al)GaN/Al(Ga)N-based, e.g., GaN/AlN, 146 GaN/AlGaN, [147][148][149][150] AlGaN/AlGaN, 151 AlGaN/ AlN, [152][153][154] and boron-containing nitride, i.e., BAlN/AlN 155 ], lattice-matched material (AlInN/AlGaN), [156][157][158][159] and nitride-porous (AlGaN/air) material. 135 The advantage of the UVnitride DBRs is that they can be monolithically grown and doped (either por n-doped for electrical pumping), and they are furthermore thermally conductive.…”

Section: -D Photonic Crystals: Distributed Bragg Reflectormentioning

confidence: 99%

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

et al. 2018

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Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…On the one hand, the quantification of the uncertainties in the lattice parameters measured by XRD may affect the interpretation of several compound's chemical composition and its derived strain state. On the other hand, the inaccuracy in the determination of the lattice match condition between the Al 1−x In x N and the GaN may reduce the quality of promising applications such as Bragg mirrors or microcavities [14,15], high electron mobility transistors [16,17] and applications regarding a sacrificial layer for the development of 3D GaN crystalline structures through chemical etching [14,18]. An important impact of the uncertainties in the mentioned physical quantities on related technologies is, thus, expected.…”

Section: Introductionmentioning

confidence: 99%

Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors

Magalhães

Cabaço²,

Concepción³

et al. 2023

J. Phys. D: Appl. Phys.

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In the present work, the importance of determining the strain states of semiconductor compounds with high accuracy is demonstrated. For the matter in question, new software titled LAPAs, the acronym for LAttice PArameters is presented. The lattice parameters as well as the chemical composition of Al1-xInxN and Ge1-xSnx compounds grown on top of GaN- and Ge- buffered c-Al2O3 and (001) oriented Si substrates, respectively, are calculated via the real space Bond’s method. The uncertainties in the lattice parameters and composition are derived, compared and discussed with the ones found via X-ray diffraction reciprocal space mapping. Broad peaks lead to increased centroid uncertainty and are found to constitute up to 99% of the total uncertainty in the lattice parameters. Refraction correction is included in the calculations and found to have an impact of 0.001 Å in the lattice parameters of both hexagonal and cubic crystallographic systems and below 0.01% in the quantification of the InN and Sn contents. Although the relaxation degrees of the nitride and tin compounds agree perfectly between the real and reciprocal-spaces methods, the uncertainty in the latter is found to be 10 times higher. The impact of the findings may be substantial for the development of applications and devices as the intervals found for the lattice match condition of Al1-xInxN grown on GaN templates vary between ~1.8% (0.1675-0.1859) and 0.04% (0.1708-0.1712) if derived via the real- and reciprocal spaces methods.

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Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities

Cited by 11 publications

References 12 publications

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors

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