Handbook of Crystal Growth 2015
DOI: 10.1016/b978-0-444-63303-3.00013-4
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Growth of Bulk Nitrides from a Na Flux

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Cited by 20 publications
(26 citation statements)
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“…It is interesting to note some separation of the ternary nitride materials synthesized in bulk and thin film forms. For example, some Mg-based Mg– M –N have been synthesized only in the thin film form, , whereas there are only bulk synthesis reports of some Ca-, Sr-, and Ba-containing materials. , Within the Zn-based Zn– M –N material family, Zn 2 SbN 3 has been synthesized only in thin film form, and Zn 2 PN 3 is an example of material synthesized only in bulk . Some of this material separation between film and bulk forms may be related to the synthesis considerations and preferences.…”
Section: Experimental Synthesismentioning
confidence: 99%
“…It is interesting to note some separation of the ternary nitride materials synthesized in bulk and thin film forms. For example, some Mg-based Mg– M –N have been synthesized only in the thin film form, , whereas there are only bulk synthesis reports of some Ca-, Sr-, and Ba-containing materials. , Within the Zn-based Zn– M –N material family, Zn 2 SbN 3 has been synthesized only in thin film form, and Zn 2 PN 3 is an example of material synthesized only in bulk . Some of this material separation between film and bulk forms may be related to the synthesis considerations and preferences.…”
Section: Experimental Synthesismentioning
confidence: 99%
“…Fabrication of bulk GaN has been attempted using several growth techniques: the hydride vapor phase epitaxy (HVPE) method, 5,6 the ammonothermal method, 7,8 the high nitrogen pressure solution method, 9 and the Na-flux method. 10,11 However, there is as yet no way to fabricate bulk GaN that achieves low dislocation density (< ∼10 5 cm −2 ), large diameter (>4 in. ), low curvature (radius of curvature >20 m), and a high growth rate (>1 mm/h).…”
Section: ■ Introductionmentioning
confidence: 99%
“…freestanding GaN wafer. 11 The threading dislocation density (TDD) of the wafer was on the order of 10 2 cm −2 to 10 5 cm −2 , and the radius of lattice curvature is more than 100 m. However, the growth rate along the c axis was 50 μm/h, which is still low for the mass production, and further improvement of the growth rate is necessary. On the other hand, ultrahigh-speed growth along the c axis, more than 1 mm/h, was accomplished with HVPE growth by Yoshida et al 14 Thus, in the present study, we propose HVPE growth on the Na-flux-grown wafer, that is, a hybrid growth method.…”
Section: ■ Introductionmentioning
confidence: 99%
“…[60] Typical dislocation densities in these crystals are 10 6 -10 11 cm −2 . These pre-existing defects in the seed crystal will transfer into the bulk grown layers leading to numerous problems.…”
Section: Progress Reportmentioning
confidence: 99%