Growth of bulk SiGe single crystals by liquid phase diffusion

Yıldız, Mehmet; Dost, S.; Lent, B.

doi:10.1016/j.jcrysgro.2005.03.030

Cited by 67 publications

(74 citation statements)

References 27 publications

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“…As seen from the thermal analysis [20], the outer region of the melt remains hotter than the inside until the melt reaches a thermal steady--state. Therefore, it is estimated intuitively that the thermal characteristic of the present system (melt being hotter near the crucible vertical wall) leads to a convective ow in the melt with two convection cells (symbolic representation of natural convection) circulating upward along the wall and downward in the centre (just opposite to what was observed in the LPD growth of SiGe in [14,16,17]), as shown schematically in Fig. 9b.…”

Section: Resultsmentioning

confidence: 80%

“…The LPD process, utilized in previous work [14], considers the silicon dissolution from the top of the melt (similar to setup C in Fig. 3).…”

Section: Resultsmentioning

confidence: 99%

“…This arrangement is similar to the crucible stacking used in the liquid phase diusion (LPD) growth system for SiGe used in Ref. [14]. Initial trial experiments were conducted with the seed secured at the bottom of the system to gauge dissolution rate.…”

Section: Methodsmentioning

confidence: 99%

“…The LPD growth process may be aided by a geometry change to utilize the buoyancy eect of the silicon [14]. The faster transport would drastically increase growth rate.…”

Section: Remarksmentioning

confidence: 99%

“…To address this issue we have utilized a solution growth technique called LPD, and grown SiGe seed single crystals from the germanium side with varying silicon compositions up to 16% (for detail, see [14,16,17,2226]). In this section, we want to examine the eects of applied magnetic elds on silicon transport in the SiGe growth melt.…”

Section: Silicon Transport Under Rotating and Combined Magnetic Elds mentioning

confidence: 99%

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Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Armour

Dost

2013

Acta Phys. Pol. A

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The silicon transport in a silicongermanium melt has been studied to address the issues of melt replenishment and seed production for the Czochralski growth of silicon germanium (SiGe) crystals. The growth of SiGe single crystals by the Czochralski method requires that the melt be replenished with silicon during the growth process due to the rejection of germanium into the melt during solidication. To facilitate the replenishment of the melt, an accurate knowledge of the dissolution rate of silicon into the melt and its transport through the melt is required. To address these issues, a number of experiments have been carried out on the dissolution of silicon into a germanium melt. Liquid phase diusion growth experiments were also conducted for insight into transport and as a possible method for seed crystal production. The experiments encompassed various temperatures, crucible geometries, crucible translation, and magnetic eld levels to determine optimum conditions for the most favorable dissolution rates and mass transport in the melt. Results have shown that replenishment from bottom of the crucible is most eective due to the enhanced silicon transport by buoyancy. The application of magnetic elds may also provide an eective mean to control the replenishment rate (mass transport rate) in the melt.

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Section: Resultsmentioning

confidence: 80%

“…The LPD process, utilized in previous work [14], considers the silicon dissolution from the top of the melt (similar to setup C in Fig. 3).…”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

“…The LPD growth process may be aided by a geometry change to utilize the buoyancy eect of the silicon [14]. The faster transport would drastically increase growth rate.…”

Section: Remarksmentioning

confidence: 99%

Section: Silicon Transport Under Rotating and Combined Magnetic Elds mentioning

confidence: 99%

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Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Armour

Dost

2013

Acta Phys. Pol. A

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Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals

Yıldız

Dost²,

Lent³

2006

Cryst. Res. Technol.

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The article presents a study for the evolution of growth interface in crystal growth by Liquid Phase Diffusion (LPD). Specific LPD experiments were designed to grow compositionally graded, germanium-rich Si x Ge 1-x single crystals of 25 mm in diameter with various thicknesses. Measured interface shapes show the evolution of the growth interface. Silicon compositions were measured by the Energy Dispersive X-ray analysis (EDX) in the growth and radial directions. The study shows the feasibility of extracting the desired seeds of uniform composition from LPD grown crystals, for subsequent use in other epitaxial growth processes.

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Incorporation of surface tension to interface energy balance in crystal growth

Yıldız¹,

Dost²

2007

Cryst. Res. Technol.

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Effect of surface tension across a growth interface is known as the Gibbs-Thomson effect, and the associated energy balance is widely referred to as the Stefan condition in the literature, which is derived from thermodynamics. In this article, the interface energy balance that accounts for the effect of surface tension is derived by writing the jump condition for the energy balance on a surface of discontinuity which represents in crystal growth the evolving growth interface (solidification front) between the liquid and solid phases. To the best of our knowledge, the derivation of energy balance by writing jump conditions on a surface of discontinuity (interface) is new.

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Growth of bulk SiGe single crystals by liquid phase diffusion

Cited by 67 publications

References 27 publications

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals

Incorporation of surface tension to interface energy balance in crystal growth

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