Growth of CuAlTe2 films by RF sputtering

Structural and optical properties of CuAlTe2thin films prepared by RF. sputtering

“…Layers of Te, Cu and Al were sequentially deposited from targets (5N), under 10 À2 mbar of argon (99.995 purity). Our experimental setup was described previously (Chahboun et al 1994). All the samples were deposited onto water-cooled glass substrate.…”

“…From a previous study Chahboun et al (1994), the conductivity of as-grown CuAlTe 2 films was found to be p-type, and some electrical properties of annealed thin films at 300 C have been investigated (El Assali et al 1995). We also know that there are two X-ray diffraction peaks at 2 ¼ 24.60 and 45.20 corresponding respectively to (112) and (220/204) orientation of the CuAlTe 2 chalcopyrite phase.…”

“…CuAlTe 2 films have been prepared using various techniques: Iodine-vapor transport (Honeyman and Wilkinson 1971), sputtering (Chahboun et al 1994, El Assali et al 1995 and Solid-solid reaction (I.V. Bodnar and M.U.…”

Illumination-induced changes on the optical functions and valence band splitting parameters of flash evaporated CuInTe2 films

“…CuInTe 2 has isothermal bulk modulus lower than that of CuInS 2 and CuInSe 2 but has larger thermal expansion coefficient [4]. CuInTe 2 shows great promise for thin film solar cell applications because it can be can be made both p and n-types [5].…”

Optical absorption and photoluminescence of CuAlTe 2

“…Nevertheless, the characteristics of CuAlTe 2 have been studied inadequately and they differ drastically. For example, band gap energy varies from 1.2 to 2.45 eV at room temperature [9][10][11][12]. Finally, up to now there are no studies of photoluminescence of this compound in the literature.…”